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SI2312BDS-T1-E3 +BOM

Power Mosfet - SOT-23 package, Single N-Channel with 20V voltage rating and 0.031 Ohms resistance

Produttore:

VISHAY
ProduttorePart #:

SI2312BDS-T1-E3
Scheda dati:

SI2312BDS-T1-E3 Scheda dati (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per SI2312BDS-T1-E3

SI2312BDS-T1-E3 Descrizione generale

The SI2312BDS-T1-E3 MOSFET is a high-performance N-channel transistor with a maximum drain current of 5A, making it suitable for a wide range of power management applications. Its SOT-23 package and SMD marking "M2" enable easy integration into compact circuit designs, while the low on-resistance of 47mOhm ensures minimal power loss in high-frequency switching applications. With a maximum drain-source voltage of 20V and a threshold voltage of 850mV, this MOSFET offers reliable and efficient operation in various electronic systems. Additionally, the pulse current rating of 15A and the low power dissipation of 750µW further enhance its suitability for demanding environments. Engineers and designers can rely on the SI2312BDS-T1-E3 MOSFET to deliver consistent performance in consumer electronics, automotive systems, and industrial equipment, making it a valuable component for optimizing circuit efficiency and effectiveness

Specifiche

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	5 A	Rds On - Drain-Source Resistance	31 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	450 mV
Qg - Gate Charge	12 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.25 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	10 ns	Forward Transconductance - Min	30 S
Height	1.45 mm	Length	2.9 mm
Product Type	MOSFET	Rise Time	30 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	35 ns
Typical Turn-On Delay Time	9 ns	Width	1.6 mm
Part # Aliases	SI2312BDS-T1-BE3 SI2312BDS-E3	Unit Weight	0.000282 oz

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