Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

SI2302ADS-T1-E3 +BOM

Small Signal Field-Effect Transistor, 2.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, ROHS COMPLIANT PACKAGE-3

Produttore:

VISHAY
ProduttorePart #:

SI2302ADS-T1-E3
Scheda dati:

SI2302ADS-T1-E3 Scheda dati (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

20 V
Current - Continuous Drain (Id) @ 25°C:

2.1A (Ta)
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per SI2302ADS-T1-E3

SI2302ADS-T1-E3 Descrizione generale

The SI2302ADS-T1-E3 MOSFET is a standout choice for those seeking superior performance in high-speed switching applications. With a negligible on-state resistance of only 95 milliohms at a gate voltage of 4.5 volts, this MOSFET delivers exceptional power management and reduced power losses. Its compact SOT-23 package makes it an ideal solution for space-constrained applications, ensuring optimal performance in portable electronics, power supplies, and battery management systems. Featuring a maximum drain-source voltage of 20 volts and a continuous drain current rating of 2.7 amperes, the SI2302ADS-T1-E3 offers reliable operation for applications requiring moderate power levels

Caratteristiche principali

1. It is a P-channel MOSFET with a maximum threshold voltage of -1.8V.
2. It has a maximum drain-source voltage (Vds) of -20V and a continuous drain current (Id) of -2.5A.
3. It has a low on-resistance (Rds(on)) of approximately 70mΩ.
4. It has a small form factor, with SOT-23 package type.

Applicazione

1. Switching circuits: SI2302ADS-T1-E3 can be used as a power switch in various electronic circuits, controlling current flow to other components.
2. Basic amplification: It can be utilized in signal amplification applications with low power requirements.
3. Battery-driven applications: Due to its low on-resistance and small package size, it is suitable for battery-powered devices like smartphones, tablets, and portable electronics.

Specifiche

Series	-	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2.1A (Ta)	Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	60mOhm @ 3.6A, 4.5V	Vgs(th) (Max) @ Id	1.2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 4.5 V	Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	300 pF @ 10 V	FET Feature	-
Power Dissipation (Max)	700mW (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	SI2302

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..