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SI1563DH-T1-E3 +BOM

Mosfet Array 20V 1.13A, 880mA 570mW Surface Mount SC-70-6

Produttore:

VISHAY
ProduttorePart #:

SI1563DH-T1-E3
Scheda dati:

SI1563DH-T1-E3 Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

6
ECCN Code:

EAR99

SI1563DH-T1-E3 Descrizione generale

The SI1563DH-T1-E3 MOSFET is a versatile dual N and P channel transistor with a compact SC-70 case style, designed for efficient power management. With a continuous drain current of 1.28A and a drain source voltage of 20V, this MOSFET offers reliable performance in a variety of applications. Its low on resistance of 280mohm and a threshold voltage of 1V make it an efficient choice for power management systems. The SI1563DH-T1-E3 has a power dissipation of 740mW, making it suitable for use in demanding conditions. With a termination type of SMD and 6 pins, it is easy to install and offers precise control in a compact package. The voltage specifications for the SI1563DH-T1-E3 include a typical Vds of 20V, a maximum Vgs of 1V, and an Rds on measurement voltage of 4.5V, providing optimal thermal performance and power handling capabilities

Caratteristiche principali

Trench MOS Schottky technology
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC and ITO-220AC package)
Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Applicazione

SWITCHING

Specifiche

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Pin Count	6	Reach Compliance Code
ECCN Code	EAR99	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	20 V	Drain Current-Max (ID)	1.13 A
Drain-source On Resistance-Max	0.28 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G6	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	6
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL	Power Dissipation-Max (Abs)	0.74 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	PURE MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..