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RQ3E120ATTB +BOM

RoHS compliant product

Produttore:

Rohm Semiconductor
ProduttorePart #:

RQ3E120ATTB
Scheda dati:

RQ3E120ATTB Scheda dati (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

53 Weeks, 1 Day
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per RQ3E120ATTB

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

RQ3E120ATTB Descrizione generale

When it comes to industrial cooling, the Trane RQ3E120ATTB stands head-and-shoulders above the competition. This commercial-grade chiller is a reliable workhorse, capable of handling even the most demanding cooling requirements with ease. Its robust design and durable components ensure longevity and minimal maintenance, while advanced controls allow for precise temperature regulation and maximum energy efficiency. With a high Energy Efficiency Ratio (EER) and low Environmental Impact Rating (EIR), this chiller is not only compliant with industry standards but also environmentally friendly, making it a top choice for cooling large industrial or commercial spaces

Applicazione

SWITCHING

Specifiche

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	53 Weeks, 1 Day
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	12 A
Drain-source On Resistance-Max	0.0113 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-F5	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	5	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Pulsed Drain Current-Max (IDM)	48 A	Surface Mount	YES
Terminal Finish	Tin (Sn)	Terminal Form	FLAT
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	10
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	39 V	Id - Continuous Drain Current	12 A
Rds On - Drain-Source Resistance	61 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V	Qg - Gate Charge	62 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2 W	Channel Mode	Enhancement
Fall Time	95 ns	Height	0.85 mm
Length	3 mm	Product Type	MOSFET
Rise Time	30 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	140 ns	Typical Turn-On Delay Time	20 ns
Width	2.4 mm	Part # Aliases	RQ3E120AT
Unit Weight	0.008517 oz

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AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..