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Vedi Specifiche Tecniche

NSV60601MZ4T1G +BOM

Low VCE(sat) Transistor, NPN, 60 V, 6.0 A

Produttore:

ON Semiconductor, LLC
ProduttorePart #:

NSV60601MZ4T1G
Scheda dati:

NSV60601MZ4T1G Scheda dati (PDF)
Transistor Type:

NPN
Current - Collector (Ic) (Max):

6 A
Voltage - Collector Emitter Breakdown (Max):

60 V
Vce Saturation (Max) @ Ib, Ic:

300mV @ 600mA, 6A
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per NSV60601MZ4T1G

E-mail: [email protected]

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tel: +852 95804164

NSV60601MZ4T1G Descrizione generale

Elevate your RF amplification capabilities with the NSV60601MZ4T1G - a powerhouse transistor that excels in high-temperature environments. With its high output power, innovative design, and advanced GaN technology, this transistor is a versatile and reliable solution for a wide range of applications. From high-power transmitters to demanding industrial settings, the NSV60601MZ4T1G delivers exceptional performance and durability, making it the ultimate choice for your RF amplification needs

Caratteristiche principali

Improved Thermal Resistance
Sufficient Current Handling
Easy Integration
High Frequency Performance

Applicazione

Industrial use
Retail solutions
Healthcare tech
Smart structures
Secure systems
Energy control

Specifiche

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	-
Transistor Type	NPN	Current - Collector (Ic) (Max)	6 A
Voltage - Collector Emitter Breakdown (Max)	60 V	Vce Saturation (Max) @ Ib, Ic	300mV @ 600mA, 6A
Current - Collector Cutoff (Max)	100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1A, 2V
Power - Max	800 mW	Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	NSV60601	Product Category	Bipolar Transistors - BJT
Mounting Style	SMD/SMT	Transistor Polarity	NPN
Configuration	Single	Collector- Emitter Voltage VCEO Max	60 V
Collector- Base Voltage VCBO	100 V	Emitter- Base Voltage VEBO	6 V
Collector-Emitter Saturation Voltage	300 mV	Maximum DC Collector Current	6 A
Pd - Power Dissipation	2 W	Gain Bandwidth Product fT	100 MHz
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Qualification	AEC-Q101	DC Collector/Base Gain hfe Min	120
DC Current Gain hFE Max	360 at 1 A, 2 V	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	1000	Subcategory	Transistors
Technology	Si	Unit Weight	0.003951 oz

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Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..

Garanzia

Prodotto 365 giorni

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Valutazioni e recensioni

Di più

C**n 07/05/2023

Delivery to lithuania 20 days.

J**n 02/21/2022

Stitched serial loader, works in arduino ide environment. Everything is fine, it came very quickly.

S**h 07/27/2021

Joe is very professional and helpful. We recommend avaq as a business partner.

C**a 01/01/2021

working ok, chip is getting hot when running, no "seek" possibility - play/stop+on/off(long), next+local vol(long), prev + local vol(long), does not seem to have a correct litium battery charging cirquit