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Vedi Specifiche Tecniche

MTP23P06V +BOM

Power MOSFET 23 Amps, 60 Volts

Produttore:

onsemi
ProduttorePart #:

MTP23P06V
Scheda dati:

MTP23P06V Scheda dati (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Obsolete
Pin Count:

3
Reach Compliance Code:

not_compliant
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per MTP23P06V

MTP23P06V Descrizione generale

The Power MOSFET MTP23P06V is a top-of-the-line device engineered to endure high energy levels during both avalanche and commutation modes. Its specialized design makes it ideal for low voltage, high-speed switching applications in power supplies, converters, and power motor controls. This MOSFET is particularly advantageous in bridge circuits where diode speed and commutating safe operating areas are crucial. Additionally, it provides an added layer of protection against unforeseen voltage transients, making it a highly reliable choice for demanding applications requiring efficiency and safety

Caratteristiche principali

Ultra-High Speed Operation
Improved Surge Immunity Specified
Economical Design for Cost Savings
Precise Timing Control Available
Sustainable Power Management System
Fully Compliant to Industry Standards

Specifiche

Source Content uid	MTP23P06V	Pbfree Code	No
Part Life Cycle Code	Obsolete	Pin Count	3
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Additional Feature	AVALANCHE RATED	Avalanche Energy Rating (Eas)	794 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	23 A
Drain-source On Resistance-Max	0.12 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e0	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	235
Polarity/Channel Type	P-CHANNEL	Power Dissipation-Max (Abs)	90 W
Pulsed Drain Current-Max (IDM)	81 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	Tin/Lead (Sn/Pb)
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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