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Vedi Specifiche Tecniche

LM195H/883 +BOM

Bipolar (BJT) Transistor NPN - Darlington 42 V Through Hole TO-39-3

Produttore:

TI
ProduttorePart #:

LM195H/883
Scheda dati:

LM195H/883 Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

not_compliant

LM195H/883 Descrizione generale

The LM195 is a fast, monolithic power integrated circuit with complete overload protection. This device, which acts as a high gain power transistor, has included on the chip, current limiting, power limiting, and thermal overload protection making it virtually impossible to destroy from any type of overload.

The inclusion of thermal limiting, a feature not easily available in discrete designs, provides virtually absolute protection against overload. Excessive power dissipation or inadequate heat sinking causes the thermal limiting circuitry to turn off the device preventing excessive heating.

The LM195 offers a significant increase in reliability as well as simplifying power circuitry. In some applications, where protection is unusually difficult, such as switching regulators, lamp or solenoid drivers where normal power dissipation is low, the LM195 is especially advantageous.

The LM195 is easy to use and only a few precautions need be observed. Excessive collector to emitter voltage can destroy the LM195 as with any power transistor. When the device is used as an emitter follower with low source impedance, it is necessary to insert a 5.0k resistor in series with the base lead to prevent possible emitter follower oscillations. Although the device is usually stable as an emitter follower, the resistor eliminates the possibility of trouble without degrading performance. Finally, since it has good high frequency response, supply bypassing is recommended.

Caratteristiche principali

Internal Thermal Limiting
Greater Than 1.0A Output Current
3.0 μA Typical Base Current
500 ns Switching Time
2.0V Saturation
Base Can be Driven up to 40V Without Damage
Directly Interfaces with CMOS or TTL
100% Electrical Burn-in

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Specifiche

Source Content uid	LM195H/883	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code	not_compliant	ECCN Code	EAR99
HTS Code	8542.39.00.01	Additional Feature	LOGIC LEVEL COMPATIBLE
Case Connection	EMITTER	Collector-Emitter Voltage-Max	42 V
Configuration	COMPLEX	JEDEC-95 Code	TO-5
JESD-30 Code	O-MBCY-W3	Moisture Sensitivity Level	1
Number of Elements	3	Number of Terminals	3
Operating Temperature-Max	125 °C	Operating Temperature-Min	-55 °C
Polarity/Channel Type	NPN AND PNP	Qualification Status	Not Qualified
Reference Standard	MIL	Surface Mount	NO
Terminal Form	WIRE	Terminal Position	BOTTOM
Transistor Application	SWITCHING	Transistor Element Material	SILICON
VCEsat-Max	2.5 V	Operating temperature range (°C)	-55 to 125
Rating	Military

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