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IXTT110N10L2 +BOM

N-channel MOSFET designed for use in various power electronics circuits demanding high voltage and current handling capabilities

Produttore:

IXYS
ProduttorePart #:

IXTT110N10L2
Scheda dati:

IXTT110N10L2 Scheda dati (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Additional Feature:

AVALANCHE RATED
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IXTT110N10L2

E-mail: [email protected]

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IXTT110N10L2 Descrizione generale

By addressing the common problem of device failure during linear-mode operation, the IXTT110N10L2 Power MOSFET offers a solution that enhances overall system efficiency and longevity. Its unique design allows for greater flexibility in operating conditions, providing a level of robustness that typical MOSFETs lack

Caratteristiche principali

Robust design and construction
Surface mountable
Operating temperatures up to 150°C
Avalanche rated

Applicazione

Safe power cycling
Precise regulation
Control fan speed

Specifiche

Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Additional Feature	AVALANCHE RATED
Avalanche Energy Rating (Eas)	3000 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	110 A	Drain-source On Resistance-Max	0.018 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-268AA
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	600 W	Pulsed Drain Current-Max (IDM)	300 A
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	10	Transistor Application	AMPLIFIER
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V	Id - Continuous Drain Current	110 A
Rds On - Drain-Source Resistance	18 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V	Qg - Gate Charge	260 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	600 W	Channel Mode	Enhancement
Series	IXTT110N10	Fall Time	24 ns
Forward Transconductance - Min	45 S	Product Type	MOSFET
Rise Time	130 ns	Factory Pack Quantity	30
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	99 ns	Typical Turn-On Delay Time	28 ns
Unit Weight	0.229281 oz

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