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IXGH50N60B is a high-power N-channel IGBT chip with a voltage rating of 600V and a current rating of 75A
TO-247AD-3Produttore:
ProduttorePart #:
IXGH50N60B
Scheda dati:
Technology:
Si
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
EDA/CAD Modelli:
Compila il breve modulo sottostante e ti forniremo immediatamente il preventivo.
The IXGH50N60B is a high power IGBT designed for industrial applications, featuring a voltage rating of 600V and a current rating of 75A, making it suitable for high power switching applications. It boasts a low VCE(sat) voltage of 2.3V at 50A, reducing power losses and improving overall efficiency. Housed in a TO-247 package, the IGBT provides good thermal performance and high power dissipation capabilities, allowing it to operate at high temperatures without compromising performance. With a high short circuit withstand time of 10µs, the IXGH50N60B is suitable for applications where short circuit protection is critical. Additionally, it has a positive temperature coefficient for ease of paralleling multiple devices, as well as a wide safe operating area for increased reliability and ruggedness. Commonly used in applications such as motor control, power supplies, and high power inverters, the IXGH50N60B proves to be a dependable and versatile choice for industrial needs
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Maximum Gate Emitter Voltage | - 20 V, + 20 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Series | IXGH50N60 | Continuous Collector Current Ic Max | 75 A |
Height | 21.46 mm | Length | 16.26 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 30 |
Subcategory | IGBTs | Width | 5.3 mm |
Unit Weight | 0.229281 oz |
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Good quality product. Seller! thanks