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IGBT 1700 V 80 A 360 W Surface Mount TO-268AA
TO-268AAProduttore:
ProduttorePart #:
IXBT42N170
Scheda dati:
Technology:
Si
Mounting Style:
SMD/SMT
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1.7 kV
EDA/CAD Modelli:
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In conclusion, the development of BiMOSFETs like the IXBT42N170 marks a significant milestone in the evolution of power semiconductor devices. Their advanced features, including the positive voltage temperature coefficient, parallel operation capabilities, and intrinsic diode protection, demonstrate the continuous innovation in the field of semiconductor technology. As these devices continue to gain recognition for their performance and reliability, they are poised to play a crucial role in powering the next generation of high voltage applications
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | SMD/SMT | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.7 kV | Collector-Emitter Saturation Voltage | 2.8 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 80 A |
Pd - Power Dissipation | 360 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | IXBT42N170 |
Continuous Collector Current | 70 A | Continuous Collector Current Ic Max | 75 A |
Height | 5.1 mm | Length | 16.05 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 30 |
Subcategory | IGBTs | Tradename | BIMOSFET |
Width | 14 mm | Unit Weight | 0.158733 oz |
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