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Vedi Specifiche Tecniche

IXBT12N300HV +BOM

IGBT 3000 V 30 A 160 W Surface Mount TO-268HV (IXBT)

Produttore:

IXYS
ProduttorePart #:

IXBT12N300HV
Scheda dati:

IXBT12N300HV Scheda dati (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Configuration:

Single
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IXBT12N300HV

IXBT12N300HV Descrizione generale

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.

Caratteristiche principali

"Free" intrinsic body diode
High power density
High frequency operation
Low conduction losses
MOS gate turn on for drive simplicity
4000V electrical isolation
Advantages:
Low gate drive requirements
Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices)
Easy to mount

Applicazione

Switched-mode and resonant-mode power supplies
Uninterruptible Power Supplies (UPS)
Laser and X-ray generators
Capacitor discharge circuits
High voltage pulser circuits
High voltage test equipment
AC switches

Specifiche

Product Category	IGBT Transistors	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Configuration	Single	Collector- Emitter Voltage VCEO Max	3 kV
Collector-Emitter Saturation Voltage	3.2 V	Maximum Gate Emitter Voltage	- 20 V, 20 V
Continuous Collector Current at 25 C	30 A	Pd - Power Dissipation	160 W
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Series	Very High Voltage	Continuous Collector Current Ic Max	30 A
Gate-Emitter Leakage Current	+/- 100 nA	Moisture Sensitive	Yes
Product Type	IGBT Transistors	Factory Pack Quantity	30
Subcategory	IGBTs	Tradename	BIMOSFET
Unit Weight	0.141096 oz

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AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..