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Vedi Specifiche Tecniche

IXBH24N170 +BOM

IGBT 1700 V 60 A 250 W Through Hole TO-247AD

Produttore:

IXYS
ProduttorePart #:

IXBH24N170
Scheda dati:

IXBH24N170 Scheda dati (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.7 kV
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IXBH24N170

IXBH24N170 Descrizione generale

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.

Caratteristiche principali

High blocking voltage
High power density
High current handling capability
Low conduction losses
MOS gate turn on for drive simplicity
International standard and proprietary ISOPLUS
TM
packages
Benefits:
Eliminates multiple series-parallel lower voltage, lower current rated
devices
Simpler system design
Improved reliability
Reduced component count
Reduced system cost

Applicazione

Radar transmitter power supplies
Radar pulse modulators
Capacitor discharge circuits
High voltage power supplies
AC switches
HV circuit breakers
Pulser circuits
High voltage test equipment
Laser & X-ray generators

Specifiche

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.7 kV	Collector-Emitter Saturation Voltage	2.5 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	60 A
Pd - Power Dissipation	250 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	IXBH24N170
Height	21.46 mm	Length	16.05 mm
Product Type	IGBT Transistors	Factory Pack Quantity	30
Subcategory	IGBTs	Tradename	BIMOSFET
Width	5.1 mm	Unit Weight	1.340411 oz

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