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FDS6982AS +BOM
Mosfet Array 30V 6.3A, 8.6A 900mW Surface Mount 8-SOIC
SOIC-8-
Produttore:
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ProduttorePart #:
FDS6982AS
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Scheda dati:
-
Pbfree Code:
Yes
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Part Life Cycle Code:
Obsolete
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Reach Compliance Code:
compliant
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ECCN Code:
EAR99
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EDA/CAD Modelli:
Disponibilità: 4867 PZ
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FDS6982AS Descrizione generale
The FDS6982AS is a versatile solution for synchronous DC:DC power supplies in modern electronic devices. Its unique design allows it to replace two single SO-8 MOSFETs and a Schottky diode, making it an efficient and space-saving choice for notebook computers and other battery-powered gadgets. With two 30V, N-channel, logic level, PowerTrench® MOSFETs, the FDS6982AS is optimized for maximum power conversion efficiency. The high-side switch (Q1) is engineered to minimize switching losses, while the low-side switch (Q2) is focused on reducing conduction losses. Additionally, Q2 features an integrated Schottky diode using Fairchild’s innovative SyncFET technology, further optimizing its performance
Caratteristiche principali
- Low on-resistance MOSFETs minimize energy losses
- Rugged and reliable construction for harsh environments
- Fully programmable logic controller (PLC) for advanced control
- Self-diagnostic capabilities detect and alert issues
- Real-time data logging and reporting
- Automatic shutdown and restart function
Applicazione
- Great for everyday use
- Lightweight and compact
- Perfect for on-the-go
Specifiche
Source Content uid | FDS6982AS | Pbfree Code | Yes |
Part Life Cycle Code | Obsolete | Reach Compliance Code | compliant |
ECCN Code | EAR99 | HTS Code | 8541.29.00.95 |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 8.6 A | Drain-source On Resistance-Max | 0.0135 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-G8 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 2 | Number of Terminals | 8 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation Ambient-Max | 2 W |
Pulsed Drain Current-Max (IDM) | 30 A | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | MATTE TIN |
Terminal Form | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Turn-off Time-Max (toff) | 64 ns |
Turn-on Time-Max (ton) | 34 ns |
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AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..
Prodotto 365 giorni
Qualità garantita
Promettiamo di fornire un servizio di garanzia della qualità di 365 giorni per tutti i nostri prodotti.
In Stock: 4.867
Minimum Order: 1
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