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500V RF MOSFET.
Produttore:
ProduttorePart #:
ARF477FL
Scheda dati:
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
15 A
Vds - Drain-Source Breakdown Voltage:
500 V
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The ARF family of RF powerMOSFETs is optimized for applications requiring frequencies as high as 150 MHzand operating voltages as high as 400V. Historically, RF power MOSFETs werelimited to applications of 50V or less. This limitation has been removed bycombining Microchip’s high-voltage MOSFET technology with RF-specific diegeometries.
TheDRF1300 and DRF1301 have two independent channels, each containing a driver andRF MOSFET in a push-pull configuration. The DRF1400 is a half-bridge hybridwith symmetrically oriented leads that can be easily configured into a full-bridgeconverter. All DRF parts feature a proprietary anti-ringfunction to eliminate cross conduction in bridge or push-pull topologies. AllDRF parts can be externally selected in either an inverting or non-invertingconfiguration.
Product Category | RF MOSFET Transistors | Transistor Polarity | N-Channel |
Technology | Si | Id - Continuous Drain Current | 15 A |
Vds - Drain-Source Breakdown Voltage | 500 V | Rds On - Drain-Source Resistance | - |
Operating Frequency | 100 MHz | Gain | 16 dB |
Output Power | 400 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Mounting Style | Flange Mount |
Product Type | RF MOSFET Transistors | Factory Pack Quantity | 1 |
Subcategory | MOSFETs | Type | RF Power MOSFET |
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