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Vedi Specifiche Tecniche

ARF463AP1G +BOM

500V RF MOSFET.

Produttore:

Microchip
ProduttorePart #:

ARF463AP1G
Scheda dati:

ARF463AP1G Scheda dati (PDF)
Transistor Polarity:

N-Channel
Technology:

Si
Id - Continuous Drain Current:

9 A
Vds - Drain-Source Breakdown Voltage:

500 V
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per ARF463AP1G

ARF463AP1G Descrizione generale

Microchip’s ARF463AP1G and the DRF series of RF power MOSFETs have revolutionized the industry by providing solutions for applications requiring high frequencies and operating voltages. With the capability to operate at frequencies as high as 150 MHz and at voltages as high as 400V, these products have effectively removed the limitations of previous RF power MOSFETs. The DRF1300, DRF1301, and DRF1400 offer unique configurations and features that make them adaptable to a wide range of applications, and the proprietary anti-ring function ensures reliable performance in various topologies

Caratteristiche principali

Semi-Cap (6, 13, 27, 40MHz)
Industrial Glass (6, 13, 27, 40MHz)
PV Cells (6, 13, 27, 40MHz)
Flat Panel Displays (6, 13, 27, 40MHz)
Mass Spectrometry (13, 27MHz)
Dielectric Heating (2 to 40MHz)
Machine Tools (6, 13, 27MHz)
Drilling (6, 13, 27MHz)
Marking (13, 27, 40, 81, 108MHz)
Cutting (6, 13, 27MHz)
MRI (8 to 36, 64, 128 300MHz)
Laser Scalpel (13, 27, 40, 81, 108MHz)
Diathermy/Hyperthermia (8MHz)
Chemical Analysis (13, 27MHz)
Marine Radio (2 to 40MHz)
HF Radio (2 to 40MHz)
FM Broadcast (87 to 108MHz)

Specifiche

Product Category	RF MOSFET Transistors	Transistor Polarity	N-Channel
Technology	Si	Id - Continuous Drain Current	9 A
Vds - Drain-Source Breakdown Voltage	500 V	Rds On - Drain-Source Resistance	-
Operating Frequency	100 MHz	Gain	15 dB
Output Power	100 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Mounting Style	Through Hole
Channel Mode	Enhancement	Fall Time	4.2 ns
Forward Transconductance - Min	2 mS	Operating Temperature Range	- 55 C to + 150 C
Pd - Power Dissipation	180 W	Product Type	RF MOSFET Transistors
Rise Time	4.3 ns	Factory Pack Quantity	1
Subcategory	MOSFETs	Type	RF Power MOSFET
Vgs - Gate-Source Voltage	30 V	Vgs th - Gate-Source Threshold Voltage	5 V
Unit Weight	1.340411 oz

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