Metodo di pagamento
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
1000V RF MOSFET.
T2-0Produttore:
ProduttorePart #:
ARF466FL
Scheda dati:
Technology:
MOSFET
Configuration:
N-Channel
Frequency:
40.68MHz
Gain:
16dB
Invia tutte le distinte materiali a
[email protected],
oppure compila il modulo sottostante per un preventivo su ARF466FL. Risposta garantita entro
12hr.
Compila il breve modulo sottostante e ti forniremo immediatamente il preventivo.
The ARF family of RF powerMOSFETs is optimized for applications requiring frequencies as high as 150 MHzand operating voltages as high as 400V. Historically, RF power MOSFETs werelimited to applications of 50V or less. This limitation has been removed bycombining Microchip’s high-voltage MOSFET technology with RF-specific diegeometries.
TheDRF1300 and DRF1301 have two independent channels, each containing a driver andRF MOSFET in a push-pull configuration. All DRF parts feature a proprietary anti-ringfunction to eliminate cross conduction in bridge or push-pull topologies. AllDRF parts can be externally selected in either an inverting or non-invertingconfiguration.
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs | Series | - |
Technology | MOSFET | Configuration | N-Channel |
Frequency | 40.68MHz | Gain | 16dB |
Voltage - Test | 150 V | Current Rating (Amps) | 13A |
Noise Figure | - | Power - Output | 150W |
Voltage - Rated | 1000 V | Base Product Number | ARF466 |
Product Type | RF Power MOSFET | Output Power (W) [max] | 150 - 750 |
Frequency (MHz) [max] | 25 - 65 | Amplifier Class | A,AB,C,D,E |
Drain Supply Voltage (dc) (V) [max] | 15 - 400 | feature-material | |
feature-configuration | Single | feature-channel-mode | Enhancement |
feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
feature-mode-of-operation | feature-maximum-drain-source-voltage-v | 1000 | |
feature-maximum-gate-source-voltage-v | ±30 | feature-maximum-gate-threshold-voltage-v | 4 |
feature-maximum-continuous-drain-current-a | 13 | feature-maximum-drain-source-resistance-mohm | 1000@10V |
feature-typical-input-capacitance-vds-pf | 2000@150V | feature-maximum-power-dissipation-mw | 1153000 |
feature-output-power-w | 300 | feature-typical-power-gain-db | 16 |
feature-minimum-frequency-mhz | feature-maximum-frequency-mhz | 45 | |
feature-packaging | Box | feature-pin-count | 6 |
feature-cecc-qualified | No | feature-esd-protection | |
feature-military | No | feature-aec-qualified | No |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc-exceeds-threshold | No |
Relativi al servizio post-vendita e alla liquidazione
Metodo di pagamento
Per canali di pagamento alternativi, contattaci a:
[email protected]metodo di spedizione
AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..
Prodotto 365 giorni
Qualità garantita
Promettiamo di fornire un servizio di garanzia della qualità di 365 giorni per tutti i nostri prodotti.
Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | $156,100 | $156,10 |
200+ | $60,409 | $12.081,80 |
500+ | $58,287 | $29.143,50 |
1000+ | $57,238 | $57.238,00 |
I prezzi sottostanti sono solo di riferimento.
2N2905
MICROCHIP
1000+ $19,458
2N3773
Onsemi
100+ $0,928
2N3055
Onsemi
1000+ $0,646
2N2219
Microchip
Excellent reliability and fast switching times make this BJTs transistor ideal for use in automotive, industrial, and consumer electronics
2N1711
Stmicroelectronics
With a gain of 8dB, this transistor is suitable for amplifying low-level signals