Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

ZXMP6A13FTA +BOM

The MOSFET identified as ZXMP6A13FTA is a P-channel device featuring a maximum drain-source voltage of -60V and a continuous drain current of -1.1A

Produttore:

Diodes Incorporated
ProduttorePart #:

ZXMP6A13FTA
Scheda dati:

ZXMP6A13FTA Scheda dati (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per ZXMP6A13FTA

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

ZXMP6A13FTA Descrizione generale

The ZXMP6A13FTA is a P-channel MOSFET transistor with a voltage range of -60V and a current range of -1.1A, making it suitable for a variety of industrial and automotive applications. It has an on-resistance (Rds(on)) of 0.4ohm and a threshold voltage (Vgs) of -3V. The transistor has a maximum power dissipation (Pd) of 625mW and operates within a temperature range of -55°C to +150°C, making it ideal for demanding environments. With a maximum gate-source voltage (Vgs) of -20V, the ZXMP6A13FTA offers reliable performance and durability in a wide range of power management applications

Caratteristiche principali

Description:The ZXMP6A13FTA is a single P-channel MOSFET with a maximum drain current of 1.1 A and a maximum drain-source voltage of 60 V. It is housed in a SOT-23-3 package and has a maximum power dissipation of 625 mW.Features:• Maximum drain current of 1.1 A• Maximum drain-source voltage of 60 V• Maximum power dissipation of 625 mW• SOT-23-3 package• Operating temperature range of -55°C to +125°CApplications:The ZXMP6A13FTA is suitable for a wide range of applications, including power management, load switching, and signal switching. It is commonly used in consumer electronics, automotive, and industrial applications.

Specifiche

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	1.1 A	Rds On - Drain-Source Resistance	600 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	5.9 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	806 mW
Channel Mode	Enhancement	Series	ZXMP6A
Configuration	Single	Fall Time	5.7 ns
Forward Transconductance - Min	1.8 S	Height	1.02 mm
Length	3.04 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	2.2 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Type	MOSFET
Typical Turn-Off Delay Time	11.2 ns	Typical Turn-On Delay Time	1.6 ns
Width	1.4 mm	Unit Weight	0.000282 oz

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..