Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

W29N02GZBIBA +BOM

Cutting-edge 2 Gigabit SLC NAND Flash Memory Operating at 29MHz in Very Fine Ball Grid Array 63 Package

Produttore:

Winbond
ProduttorePart #:

W29N02GZBIBA
Scheda dati:

W29N02GZBIBA Scheda dati (PDF)
Mounting Style:

SMD/SMT
Series:

W29N02GZ
Memory Size:

2 Gbit
Interface Type:

Parallel
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per W29N02GZBIBA

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

W29N02GZBIBA Descrizione generale

The W29N02GZBIBA NAND flash memory chip is a reliable and high-performance solution for digital devices. With its 2 gigabit storage capacity and voltage range of 2.7-3.6V, this chip is suitable for smartphones, tablets, digital cameras, and other portable electronic devices. It offers a fast read speed of up to 80MB/s and a program speed of up to 300μs per page, ensuring efficient data transfer and access. The high endurance of up to 100,000 program/erase cycles further enhances the chip's reliability and longevity, making it an ideal choice for demanding applications

Caratteristiche principali

· Single 5-volt write (erase and program) operations
· Fast page-write operations
- 256 bytes per page
- Page write (erase/program) cycle: 5 mS (typ.)
- Effective byte-write (erase/program) cycle time: 19.5 mS
- Optional software-protected data write
· Fast chip-erase operation: 50 mS
· Two 16 KB boot blocks with lockout
· Page write (erase/program) cycles: 50K (typ.)
· Read access time: 70/90/120 nS
· Ten-year data retention
· Software and hardware data protection
· Low power consumption
- Active current: 25 mA (typ.)
- Standby current: 20 mA (typ.)
·Automaticwrite (erase/program) timing with internal VPP generation
· End of write (erase/program) detection
- Toggle bit
- Data polling
· Latched address and data
· All inputs and outputs directly TTL compatible
· JEDEC standard byte-wide pinouts
· Available packages: 32-pin 600 mil DIP, TSOP and PLCC

Specifiche

Product Category	NAND Flash	Mounting Style	SMD/SMT
Series	W29N02GZ	Memory Size	2 Gbit
Interface Type	Parallel	Organization	256 M x 8
Data Bus Width	8 bit	Supply Voltage - Min	1.7 V
Supply Voltage - Max	1.95 V	Supply Current - Max	20 mA
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 85 C
Active Read Current - Max	20 mA	Moisture Sensitive	Yes
Product Type	NAND Flash	Factory Pack Quantity	210
Subcategory	Memory & Data Storage	Unit Weight	0.321581 oz
Pbfree Code	Yes	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8542.32.00.51	JESD-30 Code	R-PBGA-B63
Length	11 mm	Memory Density	2147483648 bit
Memory IC Type	FLASH	Memory Width	8
Number of Functions	1	Number of Terminals	63
Number of Words	268435456 words	Number of Words Code	256000000
Operating Mode	ASYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Parallel/Serial	PARALLEL
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Programming Voltage	1.8 V
Seated Height-Max	1 mm	Supply Voltage-Max (Vsup)	1.95 V
Supply Voltage-Min (Vsup)	1.7 V	Supply Voltage-Nom (Vsup)	1.8 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Form	BALL
Terminal Pitch	0.8 mm	Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Type	SLC NAND TYPE
Width	9 mm

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..