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Vedi Specifiche Tecniche

W29N01HVBINA +BOM

Suitable for various electronic devices

Produttore:

Winbond
ProduttorePart #:

W29N01HVBINA
Scheda dati:

W29N01HVBINA Scheda dati (PDF)
Mounting Style:

SMD/SMT
Series:

W29N01HV
Memory Size:

1 Gbit
Interface Type:

Parallel
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per W29N01HVBINA

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

W29N01HVBINA Descrizione generale

Winbond Electronics Corporation's W29N01HVBINA NAND flash memory is a cutting-edge storage solution designed to provide high performance and reliability in a compact package. With a capacity of 1Gb and a voltage range of 2.7V to 3.6V, this device is ideal for a variety of applications requiring efficient data storage. Its block, page, and sector organization allows for optimized data management, while its fast read and program speeds ensure quick access to stored information. The inclusion of ECC functionality further enhances data integrity, making the W29N01HVBINA a secure and reliable choice for industrial and commercial applications where data storage is critical

Caratteristiche principali

· Single 5-volt write (erase and program) operations
· Fast page-write operations
- 256 bytes per page
- Page write (erase/program) cycle: 5 mS (typ.)
- Effective byte-write (erase/program) cycle time: 19.5 mS
- Optional software-protected data write
· Fast chip-erase operation: 50 mS
· Two 16 KB boot blocks with lockout
· Page write (erase/program) cycles: 50K (typ.)
· Read access time: 70/90/120 nS
· Ten-year data retention
· Software and hardware data protection
· Low power consumption
- Active current: 25 mA (typ.)
- Standby current: 20 mA (typ.)
·Automaticwrite (erase/program) timing with internal VPP generation
· End of write (erase/program) detection
- Toggle bit
- Data polling
· Latched address and data
· All inputs and outputs directly TTL compatible
· JEDEC standard byte-wide pinouts
· Available packages: 32-pin 600 mil DIP, TSOP and PLCC

Specifiche

Product Category	NAND Flash	Mounting Style	SMD/SMT
Series	W29N01HV	Memory Size	1 Gbit
Interface Type	Parallel	Organization	128 M x 8
Data Bus Width	8 bit	Supply Voltage - Min	2.7 V
Supply Voltage - Max	3.6 V	Supply Current - Max	35 mA
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 85 C
Active Read Current - Max	35 mA	Moisture Sensitive	Yes
Product Type	NAND Flash	Factory Pack Quantity	210
Subcategory	Memory & Data Storage	Unit Weight	0.077031 oz

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