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Vedi Specifiche Tecniche

PBSS4260PANPSX +BOM

60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor

Produttore:

Nexperia
ProduttorePart #:

PBSS4260PANPSX
Scheda dati:

PBSS4260PANPSX Scheda dati (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

NPN, PNP
Configuration:

Dual
Collector- Emitter Voltage VCEO Max:

60 V
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per PBSS4260PANPSX

PBSS4260PANPSX Descrizione generale

With its innovative design, the PBSS4260PANPSX stands out as a superior choice for small signal applications. Housed in a leadless SMD package, this dual transistor offers breakthrough performance in a compact form factor. The visible and solderable side pads enhance ease of installation, ensuring reliable connections in various electronic setups. Paired with its complementary transistors, the PBSS4260PANSPNP and PBSS5260PAPS, this device enables versatile circuit designs with NPN/NPN and PNP/PNP configurations. From mobile devices to industrial controls, the PBSS4260PANPSX is a reliable solution for demanding electronic projects

Caratteristiche principali

Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
Exposed heat sink for excellent thermal and electrical conductivity
High energy efficiency due to less heat generation
Suitable for Automatic Optical Inspection (AOI) of solder joints
AEC-Q101 qualified

Applicazione

Load switch
Battery-driven devices
Power management
Charging circuits
LED lighting
Power switches (e.g. motors, fans)

Specifiche

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN, PNP	Configuration	Dual
Collector- Emitter Voltage VCEO Max	60 V	Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	7 V	Collector-Emitter Saturation Voltage	70 mV, 100 mV
Maximum DC Collector Current	2 A	Pd - Power Dissipation	960 mW
Gain Bandwidth Product fT	140 MHz, 100 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Qualification	AEC-Q101
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	3000
Subcategory	Transistors	Technology	Si
Part # Aliases	934068946115	Unit Weight	0.000257 oz

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