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Vedi Specifiche Tecniche

MRFE6VP100HR5 +BOM

High-reliability FET solution for industrial and commercial us

Produttore:

NXP Semiconductor
ProduttorePart #:

MRFE6VP100HR5
Scheda dati:

MRFE6VP100HR5 Scheda dati (PDF)
F<sub>i(RF)</sub> [max] (MHz):

2000
Number Of Pins:

4
Amp Class:

AB
Test Signal:

1-TONE
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per MRFE6VP100HR5

MRFE6VP100HR5 Descrizione generale

The MRFE6VP100HR5 RF transistor offers exceptional performance with a wide operating frequency range of 1.8MHz to 2000MHz. With a drain-source voltage of 133VDC, this transistor can handle high voltage levels with ease. The NI-780H-4L case style provides durability and efficient heat dissipation, making it suitable for demanding applications. Featuring 4 pins for easy connectivity, this transistor is easy to install and use. With a maximum operating temperature of 225°C, this transistor can withstand extreme temperatures without any issues. This product is compliant with regulations and does not contain any restricted substances

Caratteristiche principali

Thermal stable for high VSWR
Frequency range: 1-500 MHz supported
RoHS compliant for safe use ensured
EED protection integrated for reliability
Durable design for various applications

Applicazione

Wireless power
Energy efficient
Cooking devices

Specifiche

f<sub>i(RF)</sub> [max] (MHz)	2000	Number of pins	4
Amp Class	AB	Test Signal	1-TONE
Supply Voltage (Typ) (V)	50	Class	AB
Die Technology	LDMOS	Thermal Resistance (Spec) (℃/W)	0.38
P1dB (Typ) (dBm)	50	Security Status	COMPANY PUBLIC
Frequency (Min-Max) (MHz)	1.8,2000	Efficiency (Typ) (%)	70
Peak Power (Typ) (W)	126	Frequency Band (Hz)	1800000,2000000000
Description	Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V	f<sub>i(RF)</sub> [min] (MHz)	1.8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal	100 @ CW	P1dB (Typ) (W)	100
Gain (Typ) (dB)	27.2	Power Gain (Typ) (dB) @ f (MHz)	27.2 @ 512
Frequency (Max) (MHz)	2000	Frequency (Min) (MHz)	1.8
Frequency (Min-Max) (GHz)	0.0018000001 to 2	f<sub>range</sub> [max] (MHz)	2000
f<sub>range</sub> [min] (MHz)	1.8	Rth(j-a) (K/W)	0.38
Matching	unmatched	Modes of Operation	single-tone modulation
Product Category	RF MOSFET Transistors	Transistor Polarity	N-Channel
Technology	Si	Id - Continuous Drain Current	1 A
Vds - Drain-Source Breakdown Voltage	141 V	Rds On - Drain-Source Resistance	-
Operating Frequency	1.8 MHz to 2000 MHz	Gain	26 dB
Output Power	100 W	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C	Mounting Style	SMD/SMT
Configuration	Single	Product Type	RF MOSFET Transistors
Series	MRFE6VP100H	Factory Pack Quantity	50
Subcategory	MOSFETs	Transistor Type	LDMOS FET
Type	RF Power MOSFET	Vgs - Gate-Source Voltage	- 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage	2.1 V	Part # Aliases	935319905178
Unit Weight	0.225605 oz

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Garanzia

Prodotto 365 giorni

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Promettiamo di fornire un servizio di garanzia della qualità di 365 giorni per tutti i nostri prodotti.

Valutazioni e recensioni

Di più

M**a 09/27/2022

Excellent product, i recommend to everyone.

J**n 05/15/2020

Pretty fast shipping. Good packing. Excellent quality. Everything works. Sociable, honest seller. I recommend. The seller is a plus.Quite fast delivery. Good packing. Excellent quality. Everything is working. Sociable, honest seller. Recommend. Seller plus sign.