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MBT3904DW1T1G +BOM

Transistor for small electronic circuits, featuring a maximum current of 0.2A and a voltage rating of 40V

MBT3904DW1T1G Descrizione generale

The MBT3904DW1T1G is a general-purpose NPN bipolar junction transistor (BJT). It is designed for use in a variety of electronic applications where amplification and switching of electrical signals are required. The "DW1T1G" in the part number indicates the specific package type and manufacturing details.

mbt3904dw1t1g

Caratteristiche principali

  • h
  • FE
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • Available in 8 mm, 7-inch/3,000 Unit Tape and Reel
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CompliantCapable

Applicazione

  • Amplifiers: They are used in amplification stages of audio amplifiers, RF amplifiers, and operational amplifier (op-amp) circuits.
  • Switching Circuits: NPN transistors function as electronic switches in digital logic circuits and switching power supplies.
  • Signal Modulation: In RF circuits, they are used for amplitude modulation (AM) and frequency modulation (FM).
  • Signal Processing: NPN transistors are utilized in signal processing applications such as analog signal conditioning and filtering.
  • Oscillator Circuits: They play a crucial role in oscillator circuits for signal generation and clock generation in digital circuits.
  • Voltage Regulation: In voltage regulator circuits, they help maintain a stable output voltage.
  • Light Sensing: NPN transistors are used in optoelectronic applications, including light-sensitive circuits like light-dependent resistors (LDRs) and phototransistors.
  • Electronic Projects: They are commonly used in hobbyist and DIY electronics projects.

Specifiche

Status Active Case Outline 419B-02
MSL Temp (°C) 260 Container Type REEL
Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN Configuration Dual
Collector- Emitter Voltage VCEO Max 40 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 300 mV
Maximum DC Collector Current 200 mA Pd - Power Dissipation 150 mW
Gain Bandwidth Product fT 300 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series MBT3904DW1
Continuous Collector Current - 2 A DC Collector/Base Gain hfe Min 40
Height 0.9 mm Length 2 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 3000
Subcategory Transistors Technology Si
Width 1.25 mm Part # Aliases MBT3904DW1T3G
Unit Weight 0.000988 oz
MBT3904DW1

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Valutazioni e recensioni

Di più
Z
Z**a 02/18/2024

Thanks to the seller, received everything works! It took a long 55 days, the cheapest delivery of cainiao super economy, threw in a mailbox, a package of pupyrka. Want faster order delivery more expensive.

16
G
G**n 01/23/2023

It's all ok. Thanks!

9
E
E**a 06/09/2022

Delivery 109 days, the longest parcel, it is not clear where it all this time lay, because. Not tracked.Pins are not marked. But in the description there is a pinout.I'll try it.3 only for shipping, although it is necessary to put below. (maybe i just was not lucky)I do recommend this delivery.

17
J
J**e 05/12/2021

Items arrived as described.

10

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MBT3904DW1T1G Scheda dati PDF

Preliminary Specification MBT3904DW1T1G PDF Scaricamento

MBT3904DW1T1G PDF Anteprima