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JS28F128M29EWLA +BOM

PDSO56 TSOP-56 package

Produttore:

Micron Technology Inc.
ProduttorePart #:

JS28F128M29EWLA
Scheda dati:

JS28F128M29EWLA Scheda dati (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per JS28F128M29EWLA

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

JS28F128M29EWLA Descrizione generale

When it comes to reliability, the JS28F128M29EWLA delivers with a guaranteed minimum of 20 years of data retention and an impressive 100,000 program/erase cycles per block. Its wide operating temperature range of -40°C to 85°C further ensures that it can withstand harsh environmental conditions, making it ideal for demanding industrial and automotive environments. With its high capacity, speed, and reliability, the JS28F128M29EWLA is a top choice for those seeking a Flash memory solution that can meet their performance and durability requirements

Caratteristiche principali

Architecture
— Symmetrical 128-Kbyte blocks
— 256 Mbit (256 blocks)
— 128 Mbit (128 blocks)
— 64 Mbit (64 blocks)
— 32 Mbit (32 blocks)
Performance
— 75 ns Initial Access Speed (32,64,128 Mbit densities)
— 95 ns Initial Access Speed (256Mbit only)
— 25 ns 8-word and 4-word Asynchronous page-mode reads
— 32-Byte Write buffer; 4 µs per Byte Effective programming time
System Voltage
— VCC = 2.7 V to 3.6 V
— VCCQ = 2.7 V to 3.6 V
Packaging
— 56-Lead TSOP (32, 64, 128, 256 Mbit)
— 64-Ball Numonyx Easy BGA package (32, 64, 128 and 256 Mbit)
Security
— Enhanced security options for code protection
— 128-bit Protection Register: 64-bits Unique device identifier bits 64-bits User-programmable OTP bits
— Absolute protection with VPEN = GND
— Individual block locking
— Block erase/program lockout during power transitions
Software
— Program and erase suspend support
— Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible
Quality and Reliability
— Operating temperature: -40 °C to +85 °C
— 100K Minimum erase cycles per block
— 0.13 µm ETOX™ VIII Process technology

Specifiche

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NOR
Memory Size	128Mbit	Memory Organization	16M x 8, 8M x 16
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	70ns	Access Time	70 ns
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount

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