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JS28F256P33BFE +BOM
6MX16 Flash Memory with 105ns Speed in PDSO56 Package
TSOP-56-
Produttore:
Micron Technology Inc.
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ProduttorePart #:
JS28F256P33BFE
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Scheda dati:
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Programmabe:
Not Verified
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Memory Type:
Non-Volatile
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Memory Format:
FLASH
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Technology:
FLASH - NOR
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EDA/CAD Modelli:
Disponibilità: 5124 PZ
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JS28F256P33BFE Descrizione generale
Intel's JS28F256P33BFE flash memory device offers exceptional reliability and performance, making it an ideal solution for data storage needs. With a storage capacity of 256 megabits and 3.3V power supply operation, it provides ample space and efficient power usage. The organization into 64 sectors with 16 blocks each ensures efficient data management and storage
Caratteristiche principali
- High performance
- — 85/88 ns initial access
- — 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
- — 25 ns asynchronous-page read mode
- — 4-, 8-, 16-, and continuous-word burst mode
- — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
- — 1.8 V buffered programming at 7 µs/byte (Typ)
- Architecture
- — Multi-Level Cell Technology: Highest Density at Lowest Cost
- — Asymmetrically-blocked architecture
- — Four 32-KByte parameter blocks: top or bottom configuration
- — 128-KByte main blocks
- Voltage and Power
- —VCC(core) voltage: 1.7 V – 2.0 V
- —VCCQ (I/O) voltage: 1.7 V – 3.6 V
- — Standby current: 55 µA (Typ) for 256-Mbit
- — 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
- Quality and Reliability
- — Operating temperature: –40 °C to +85 °C
- 1-Gbit in SCSP is –30 °C to +85 °C
- — Minimum 100,000 erase cycles per block
- — ETOX™ VIII process technology (130 nm)
- Security
- — One-Time Programmable Registers:
- 64 unique factory device identifier bits
- 64 user-programmable OTP bits
- Additional 2048 user-programmable OTP bits
- — Selectable OTP Space in Main Array:
- 4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
- — Absolute write protection: VPP= VSS
- — Power-transition erase/program lockout
- — Individual zero-latency block locking
- — Individual block lock-down
- Software
- — 20 µs (Typ) program suspend
- — 20 µs (Typ) erase suspend
- —Intel® Flash Data Integrator optimized
- — Basic Command Set and Extended Command Set compatible
- — Common Flash Interface capable
- Density and Packaging
- — 64/128/256-Mbit densities in 56-Lead TSOP package
- — 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package
- — 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP
- — 16-bit wide data bus
Specifiche
Programmabe | Not Verified | Memory Type | Non-Volatile |
Memory Format | FLASH | Technology | FLASH - NOR |
Memory Size | 256Mbit | Memory Organization | 16M x 16 |
Memory Interface | Parallel | Clock Frequency | 40 MHz |
Write Cycle Time - Word, Page | 105ns | Access Time | 105 ns |
Voltage - Supply | 2.3V ~ 3.6V | Operating Temperature | -40°C ~ 85°C (TC) |
Mounting Type | Surface Mount |
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Prodotto 365 giorni
Qualità garantita
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In Stock: 5.124
Minimum Order: 1
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