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IPB320N20N3GATMA1 +BOM

Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R

Produttore:

INFINEON
ProduttorePart #:

IPB320N20N3GATMA1
Scheda dati:

IPB320N20N3GATMA1 Scheda dati (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Active
Pin Count:

4
Reach Compliance Code:

not_compliant
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IPB320N20N3GATMA1

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

IPB320N20N3GATMA1 Descrizione generale

Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply

Caratteristiche principali

With To-263(D2PAK) package
Low input capacitance and gate charge
Low gate input resistance
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation

Specifiche

Source Content uid	IPB320N20N3GATMA1	Pbfree Code	No
Part Life Cycle Code	Active	Pin Count	4
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Avalanche Energy Rating (Eas)	190 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	200 V	Drain Current-Max (ID)	34 A
Drain-source On Resistance-Max	0.032 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-263AB	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	136 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	200 V	Id - Continuous Drain Current	34 A
Rds On - Drain-Source Resistance	28 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2 V	Qg - Gate Charge	29 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	136 W	Channel Mode	Enhancement
Tradename	OptiMOS	Series	OptiMOS 3
Fall Time	4 ns	Forward Transconductance - Min	27 S
Height	4.4 mm	Length	10 mm
Product Type	MOSFET	Rise Time	9 ns
Factory Pack Quantity	1000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	21 ns
Typical Turn-On Delay Time	11 ns	Width	9.25 mm
Part # Aliases	IPB320N20N3 G SP000691172	Unit Weight	0.139332 oz
FET Type	N-Channel	Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	34A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	32mOhm @ 34A, 10V	Vgs(th) (Max) @ Id	4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2350 pF @ 100 V	Power Dissipation (Max)	136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IPB320

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