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IPA60R165CP +BOM

600V 21A TO220FP-3 CoolMOS CP N-channel MOSFET

Produttore:

Infineon
ProduttorePart #:

IPA60R165CP
Scheda dati:

IPA60R165CP Scheda dati (PDF)
RthJA Max:

80.0 K/W
Operating Temperature Min:

-55.0 °C
Ptot Max:

34.0 W
VDS Max:

600.0 V
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IPA60R165CP

E-mail: [email protected]

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tel: +852 95804164

IPA60R165CP Descrizione generale

The IPA60R165CP is a N-channel enhancement mode power transistor in a TO-220 package. It is designed for high power applications, specifically for use in switching power supplies and motor control circuits. This transistor has a breakdown voltage of 650V and a continuous drain current rating of 60A. It has a low on-state resistance of 0.165 ohms, which allows for efficient power dissipation and low conduction losses. The IPA60R165CP features a fast switching speed and low gate charge, making it suitable for high frequency switching applications. It also has a high avalanche energy rating, providing protection against voltage spikes and overloads.This transistor is designed with a rugged and reliable construction, making it suitable for demanding industrial and automotive applications. It operates over a wide temperature range and has a high junction temperature rating, ensuring stable performance in varying operating conditions.

Caratteristiche principali

Optimal switching performance
Low on-state resistance
Reduced switching and conduction losses
Enhanced efficiency in a wide range of applications
High reliability and robustness
Suitable for high power density designs
Compatible with various circuit configurations

Applicazione

Industrial automation
Motor control
Renewable energy
Power supplies
Electric vehicles

Specifiche

RthJA max	80.0 K/W	Operating Temperature min	-55.0 °C
Ptot max	34.0 W	VDS max	600.0 V
VGS(th) max	3.5 V	VGS(th) min	2.5 V
RthJC max	3.65 K/W	IDpuls max	61.0 A
Polarity	N	ID max	21.0 A
RDS (on) max	165.0 mΩ	Mounting	THT

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