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IDW40E65D2 +BOM

Fast-switching rectifier diode capable of handling up to 80A current at 650V, featuring a quick response time of 75ns. Packaged in TO-247

Produttore:

Infineon Technologies Corporation
ProduttorePart #:

IDW40E65D2
Scheda dati:

IDW40E65D2 Scheda dati (PDF)
Feature-type:

Switching Diode
Feature-configuration:

Single
Feature-peak-reverse-repetitive-voltage-v:

650
Feature-maximum-continuous-forward-current-a:

80
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IDW40E65D2

E-mail: [email protected]

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tel: +852 95804164

IDW40E65D2 Descrizione generale

The IDW40E65D2 by Infineon Technologies is a cutting-edge dual low-side gate driver IC that redefines the standards for motor control and inverter applications. With a peak output current of 5 A per channel and a wide operating voltage range of 6 V to 20 V, this device is perfectly suited for high-power and high-speed switching tasks. Its integrated dead-time and shoot-through protection mechanisms guarantee reliable and safe operation in all scenarios, while the dual output capability allows for seamless driving of both high-side and low-side N-channel MOSFETs and IGBTs. Additionally, the IDW40E65D2 is equipped with under-voltage lockout and over-current protection circuits, further enhancing its durability and performance

Infineon Technologies Corporation inventario

Caratteristiche principali

Lowest reverse recovery charge (Qrr): forward voltage (VF) ratio for BiC performance
Low reverse recovery time (trr)
Lowest Irrm to provide lowest turn-on losses on the boost switch

Infineon Technologies Corporation Stock originale

Applicazione

Telecom
Server
PC Power
UPS
Welding
Adapter
Air condition
Home appliance
AC-DC

Specifiche

feature-type	Switching Diode	feature-material
feature-configuration	Single	feature-peak-reverse-repetitive-voltage-v	650
feature-maximum-continuous-forward-current-a	80	feature-peak-non-repetitive-surge-current-a	250
feature-peak-forward-voltage-v	2.3@40A	feature-peak-reverse-current-ua	40
feature-maximum-junction-ambient-thermal-resistance		feature-maximum-diode-capacitance-pf
feature-maximum-power-dissipation-mw	180000	feature-peak-reverse-recovery-time-ns	75
feature-packaging	Tube	feature-rad-hard
feature-pin-count	3	feature-cecc-qualified	No
feature-esd-protection		feature-escc-qualified
feature-military	No	feature-aec-qualified	No
feature-aec-qualified-number		feature-auto-motive	No
feature-p-pap	No	feature-eccn-code	EAR99
feature-svhc	No	feature-svhc-exceeds-threshold	No
IF max	80.0 A	I(FSM) max	320.0 A
VF max	1.6 V	IR max	40.0 µA
Ptot max	180.0 W	RthJC max	0.84 K/W
Operating Temperature max	175.0 °C	Operating Temperature min	-40.0 °C
Mounting	THT	Configuration	Single
Voltage Class max	650.0 V

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