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HFA3128B +BOM

Ultra High Frequency Transistor Arrays

Produttore:

Intersil
ProduttorePart #:

HFA3128B
Scheda dati:

HFA3128B Scheda dati (PDF)
Transistor Type:

5 PNP
Voltage - Collector Emitter Breakdown (Max):

15V
Frequency - Transition:

5.5GHz
Noise Figure (dB Typ @ F):

3.5dB @ 1GHz

HFA3128B Descrizione generale

Support is limited to customers who have already adopted these products.

The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a f_T of 8GHz while the PNP transistors provide a f_T of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Application note AN9315 illustrates the use of these devices as RF amplifiers.

Caratteristiche principali

NPN transistor (f_T) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
NPN current gain (h_FE) . . . . . . . . . . . . . . . . . . . . . . . . 130
NPN early voltage (V_A). . . . . . . . . . . . . . . . . . . . . . . . 50V
PNP transistor (f_T) . . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
PNP current gain (h_FE) . . . . . . . . . . . . . . . . . . . . . . . . . 60
PNP early voltage (V_A). . . . . . . . . . . . . . . . . . . . . . . . .20V
Noise figure (50Ω) at 1.0GHz. . . . . . . . . . . . . . . . . . 3.5dB
Collector to collector leakage . . . . . . . . . . . . . . . . . . .<1pA
Complete isolation between transistors
Pin compatible with industry standard 3XXX series arrays
Pb-free (RoHS compliant)

Specifiche

Series	-	Transistor Type	5 PNP
Voltage - Collector Emitter Breakdown (Max)	15V	Frequency - Transition	5.5GHz
Noise Figure (dB Typ @ f)	3.5dB @ 1GHz	Gain	-
Power - Max	150mW	DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 10mA, 2V
Current - Collector (Ic) (Max)	65mA	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount

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