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H5TQ2G83EFR-PBC +BOM

Advanced CMOS technology enables low latency performance

Caratteristiche principali

  • VDD=VDDQ=1.5V +/- 0.075V
  • Fully differential clock inputs (CK, CK) operation
  • Differential Data Strobe (DQS, DQS)
  • On chip DLL align DQ, DQS and DQS transition with CK 
  • transition
  • DM masks write data-in at the both rising and falling 
  • edges of the data strobe
  • All addresses and control inputs except data, 
  • data strobes and data masks latched on the 
  • rising edges of the clock
  • Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 12, 13
  • and 14 supported
  • Programmable additive latency 0, CL-1, and CL-2 
  • supported
  • Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9, 10
  • Programmable burst length 4/8 with both nibble 
  • sequential and interleave mode
  • BL switch on the fly
  • 8banks
  • Average Refresh Cycle (Tcase of0 oC~ 95oC)
  • - 7.8 µs at 0oC ~ 85 oC
  • - 3.9 µs at 85oC ~ 95 oC
  • JEDEC standard 78ball FBGA(x4/x8)
  • Driver strength selected by EMRS
  • Dynamic On Die Termination supported
  • Asynchronous RESET pin supported
  • ZQ calibration supported
  • TDQS (Termination Data Strobe) supported (x8 only)
  • Write Levelization supported
  • 8 bit pre-fetch
  • This product in compliance with the RoHS directive.

Specifiche

Part Life Cycle Code Obsolete Pin Count 78
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8542.32.00.36 Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.225 ns Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 800 MHz I/O Type COMMON
Interleaved Burst Length 4,8 JESD-30 Code R-PBGA-B78
Length 11 mm Memory Density 2147483648 bit
Memory IC Type DDR3 DRAM Memory Width 8
Number of Functions 1 Number of Ports 1
Number of Terminals 78 Number of Words 268435456 words
Number of Words Code 256000000 Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C Organization 256MX8
Output Characteristics 3-STATE Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Supplies 1.5 V Qualification Status Not Qualified
Refresh Cycles 8192 Seated Height-Max 1.2 mm
Self Refresh YES Sequential Burst Length 4,8
Standby Current-Max 0.012 A Supply Current-Max 0.13 mA
Supply Voltage-Max (Vsup) 1.575 V Supply Voltage-Min (Vsup) 1.425 V
Supply Voltage-Nom (Vsup) 1.5 V Surface Mount YES
Technology CMOS Temperature Grade OTHER
Terminal Form BALL Terminal Pitch 0.8 mm
Terminal Position BOTTOM Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 7.5 mm

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