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FGH75T65SHDTL4 +BOM

The FGH75T65SHDTL4 is housed in a TO-247-4 package

Produttore:

Onsemi
ProduttorePart #:

FGH75T65SHDTL4
Scheda dati:

FGH75T65SHDTL4 Scheda dati (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

650 V
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per FGH75T65SHDTL4

E-mail: [email protected]

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FGH75T65SHDTL4 Descrizione generale

ON Semiconductor's new series of field stop 3rd generation IGBTs, exemplified by the FGH75T65SHDTL4, is setting a new standard for performance in the industry. By incorporating the latest advancements in IGBT technology, this product offers unmatched efficiency and precision in critical applications such as solar inverters, UPS systems, welders, telecommunications equipment, energy storage systems, and power factor correction units. With its low conduction and switching losses, the FGH75T65SHDTL4 is a game-changer for engineers and developers seeking to optimize the performance of their designs

Caratteristiche principali

Fault-Tolerant Redundancy Built-In
Predictive Failure Analysis and Prevention
Advanced Thermal Monitoring and Control
Enhanced Secure Boot Mechanism Integrated
Tightened Voltage Regulation Loop with Hysteresis
Sophisticated Error Handling and Recovery Mechanisms

Specifiche

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	650 V	Collector-Emitter Saturation Voltage	1.6 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	150 A
Pd - Power Dissipation	455 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Series	FGH75T65SHDTL4
Continuous Collector Current Ic Max	150 A	Gate-Emitter Leakage Current	400 nA
Product Type	IGBT Transistors	Factory Pack Quantity	450
Subcategory	IGBTs	Unit Weight	0.221838 oz

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