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Trans IGBT Chip N-CH 600V 40A 100W 3-Pin(3+Tab) TO-3PF Tube
TO3PFProduttore:
ProduttorePart #:
FGAF40N60UFTU
Scheda dati:
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
40 A
Current - Collector Pulsed (Icm):
160 A
Vce(on) (Max) @ Vge, Ic:
3V @ 15V, 20A
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The FGAF40N60UFTU power MOSFET transistor is the perfect solution for high power applications, offering a maximum drain-source voltage of 600V and a continuous drain current of 40A. Its low on-resistance ensures minimal power losses and improved efficiency in high current scenarios. Housed in a TO-3P package, this transistor provides superior thermal performance and effective heat dissipation, making it suitable for use in demanding high power applications where thermal management is essential. With a gate-source threshold voltage of 4V and a gate charge of 40nC, the FGAF40N60UFTU allows for fast switching speeds and precise control over its operation, making it an ideal choice for applications requiring high-speed switching such as motor drives, power inverters, and uninterruptible power supplies
Category | Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs | Series | - |
IGBT Type | - | Voltage - Collector Emitter Breakdown (Max) | 600 V |
Current - Collector (Ic) (Max) | 40 A | Current - Collector Pulsed (Icm) | 160 A |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 20A | Power - Max | 100 W |
Switching Energy | 470µJ (on), 130µJ (off) | Input Type | Standard |
Gate Charge | 77 nC | Td (on/off) @ 25°C | 15ns/65ns |
Test Condition | 300V, 20A, 10Ohm, 15V | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Base Product Number | FGAF40 |
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 3.1 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 40 A |
Pd - Power Dissipation | 100 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Continuous Collector Current Ic Max | 40 A |
Gate-Emitter Leakage Current | 100 nA | Height | 16.7 mm |
Length | 15.7 mm | Product Type | IGBT Transistors |
Factory Pack Quantity | 30 | Subcategory | IGBTs |
Width | 5.7 mm | Part # Aliases | FGAF40N60UFTU_NL |
Unit Weight | 0.245577 oz |
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Prodotto 365 giorni
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The product corresponds to the described, packed well