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Vedi Specifiche Tecniche

EDE1108AJBG-8E-F +BOM

DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60

Produttore:

ELPIDA MEMORY INC
ProduttorePart #:

EDE1108AJBG-8E-F
Scheda dati:

EDE1108AJBG-8E-F Scheda dati (PDF)
Part Life Cycle Code:

Obsolete
Pin Count:

60
ECCN Code:

EAR99
HTS Code:

8542.32.00.32
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per EDE1108AJBG-8E-F

Caratteristiche principali

Double-data-rate architecture; two data transfers per clock cycle
The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture
Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver
DQS is edge-aligned with data for READs; center aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK transitions
Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
Data mask (DM) for write data
Posted /CAS by programmable additive latency for better command and data bus efficiency
Programmable RDQS, /RDQS output for making ×8 organization compatible to ×4 organization
/DQS, (/RDQS) can be disabled for single-ended Data Strobe operation
Off-Chip Driver (OCD) impedance adjustment is not supported.

Specifiche

Part Life Cycle Code	Obsolete	Pin Count	60
Reach Compliance Code		ECCN Code	EAR99
HTS Code	8542.32.00.32	Access Mode	MULTI BANK PAGE BURST
Access Time-Max	0.4 ns	Additional Feature	AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)	400 MHz	I/O Type	COMMON
Interleaved Burst Length	4,8	JESD-30 Code	R-PBGA-B60
JESD-609 Code	e1	Length	9.5 mm
Memory Density	1073741824 bit	Memory IC Type	DDR2 DRAM
Memory Width	8	Number of Functions	1
Number of Ports	1	Number of Terminals	60
Number of Words	134217728 words	Number of Words Code	128000000
Operating Mode	SYNCHRONOUS	Organization	128MX8
Output Characteristics	3-STATE	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Power Supplies	1.8 V	Qualification Status	Not Qualified
Refresh Cycles	8192	Seated Height-Max	1.2 mm
Self Refresh	YES	Sequential Burst Length	4,8
Supply Current-Max	0.13 mA	Supply Voltage-Max (Vsup)	1.9 V
Supply Voltage-Min (Vsup)	1.7 V	Supply Voltage-Nom (Vsup)	1.8 V
Surface Mount	YES	Technology	CMOS
Terminal Form	BALL	Terminal Pitch	0.8 mm
Terminal Position	BOTTOM	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Width	8 mm

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