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Vedi Specifiche Tecniche

DTC114YMT2L +BOM

Advanced electronic component for digital applications

Produttore:

ROHM CO LTD
ProduttorePart #:

DTC114YMT2L
Scheda dati:

DTC114YMT2L Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per DTC114YMT2L

DTC114YMT2L Descrizione generale

ROHM Semiconductor's DTC114YMT2L digital transistor offers designers a compact and efficient solution for digital circuitry. This NPN transistor features built-in bias resistors that streamline circuit design, eliminating the hassle of incorporating additional components. With a collector current rating of 100mA and a collector-base voltage of 50V, the DTC114YMT2L provides reliable performance in a small SOT-323 package, making it an excellent choice for projects with limited space constraints. Whether used in logic level shifting, interface circuits, or other digital logic applications, this digital transistor is designed to meet the demands of modern electronic designs where space-saving and simplicity are paramount

Caratteristiche principali

BUILT IN BIAS RESISTOR RATIO IS 4.7

Applicazione

SWITCHING

Specifiche

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8541.21.00.75
Factory Lead Time	53 Weeks, 1 Day	Additional Feature	BUILT IN BIAS RESISTOR RATIO IS 4.7
Collector Current-Max (IC)	0.1 A	Collector-Emitter Voltage-Max	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	DC Current Gain-Min (hFE)	68
JESD-30 Code	R-PDSO-F3	JESD-609 Code	e2
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	NPN
Power Dissipation Ambient-Max	0.15 W	Power Dissipation-Max (Abs)	0.15 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Tin/Copper (Sn/Cu)	Terminal Form	FLAT
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	250 MHz

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