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CA3096E +BOM

CA3096E product description

Produttore:

Renesas Electronics
ProduttorePart #:

CA3096E
Scheda dati:

CA3096E Scheda dati (PDF)
Transistor Polarity:

NPN, PNP
Configuration:

Quint
Collector- Emitter Voltage VCEO Max:

40 V
Collector- Base Voltage VCBO:

45 V
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per CA3096E

E-mail: [email protected]

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tel: +852 95804164

CA3096E Descrizione generale

The CA3096E transistor array is the epitome of versatility and reliability, featuring a monolithic NPN silicon design with five transistors sporting common emitter connections. Packaged in a sleek 18-lead dual in-line plastic package, this array offers a voltage rating of 15V and a current rating of 100mA, making it an ideal choice for a wide range of low to medium power amplification tasks. With tightly matched transistor characteristics, the CA3096E ensures consistent performance, making it a perfect fit for precision circuit designs that require pinpoint accuracy. Its seamless interconnectivity allows for the creation of intricate circuit configurations like differential amplifiers, current mirrors, and voltage sources. Operating seamlessly across a broad temperature range from -55°C to 125°C, this transistor array excels in various operating environments. Boasting a low collector-to-emitter saturation voltage and high current gain, the CA3096E delivers exceptional performance in amplification tasks, setting a new standard for quality and efficiency

Caratteristiche principali

High-speed, low-power amplifier
Fast switching, high-current transistor
Low noise, wide bandwidth operation
Multi-purpose IC for audio amplifiers
Rugged, high-reliability performance
Easy to use, flexible design

Applicazione

RF signal processing
Audio amplification
Industrial monitoring

Specifiche

Product Category	Bipolar Transistors - BJT	Transistor Polarity	NPN, PNP
Configuration	Quint	Collector- Emitter Voltage VCEO Max	40 V
Collector- Base Voltage VCBO	45 V	Emitter- Base Voltage VEBO	6 V
Maximum DC Collector Current	50 mA	Pd - Power Dissipation	200 mW
Gain Bandwidth Product fT	335 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 125 C	DC Collector/Base Gain hfe Min	150 at 1 mA, 5 V
Height	4.95 mm	Length	19.68 mm
Product Type	BJTs - Bipolar Transistors	Subcategory	Transistors
Technology	Si	Width	7.11 mm
Unit Weight	0.057419 oz

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