Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

BSS84W-7-F +BOM

Polarity: P-channel

Produttore:

Diodes Incorporated
ProduttorePart #:

BSS84W-7-F
Scheda dati:

BSS84W-7-F Scheda dati (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per BSS84W-7-F

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

BSS84W-7-F Descrizione generale

The BSS84W-7-F stands as a notable offering in the realm of field-effect transistors, providing engineers and designers with a reliable solution for high-speed switching applications. From audio amplifiers to power management circuits, this FET demonstrates its versatility and efficiency in handling complex tasks with ease. Its impressive specs, including a maximum drain-source voltage of 50V and a low on-resistance of 8 ohms, highlight its capability to deliver consistent performance even under challenging conditions. With a gate threshold voltage of 1.3V and a compact SOT-323 package, the BSS84W-7-F is tailor-made for modern electronics applications where space and efficiency are paramount

Caratteristiche principali

High Frequency Performance
Pulse Width Modulation Supported
Silicon Gate Technology Used
Ruggedized ESD Protection
Low Input Capacitance
Fast Switching Time

Applicazione

Portable electronic devices
Mobile phones
Tablets
Laptops
LED lighting
Low voltage applications
Battery management systems
Automotive electronics
Industrial automation
RF power amplifiers

Specifiche

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	50 V
Id - Continuous Drain Current	130 mA	Rds On - Drain-Source Resistance	10 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	800 mV
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	200 mW	Channel Mode	Enhancement
Series	BSS84	Configuration	Single
Forward Transconductance - Min	0.05 S	Height	1 mm
Length	2.2 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Type	Enhancement Mode Field Effect Transistor	Typical Turn-Off Delay Time	18 ns
Typical Turn-On Delay Time	10 ns	Width	1.35 mm
Unit Weight	0.000212 oz

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..