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Single FETs, MOSFETs

Immagine e modelli
Descrizione
RoHS
Scheda dati
Stato del ciclo di vita
Quantità
Operazione
SPW11N80C3
SPW11N80C3

Infineon Technologies Corporation

TO-247-3

N-Channel MOSFET Transistor

nrnd
In magazzino: 4.988   PZ Minimo:1
SPP24N60C3
SPP24N60C3

Infineon

TO-220

The SPP24N60C3 is a 600V N-MOSFET transistor designed for unipolar operation, capable of handling up to 15

obsolete
In magazzino: 5.772   PZ Minimo:1
SPP11N80C3
SPP11N80C3

Infineon

TO-220

This MOSFET, designated as SPP11N80C3, operates as an N-channel power device with capabilities of 800 volts and 11 amps

In magazzino: 4.014   PZ Minimo:1
SPA17N80C3
SPA17N80C3

Infineon

TO-220 FullPAK

Specifications: This product is an N-channel MOSFET capable of handling up to 800 volts and 17 amps

In magazzino: 6.145   PZ Minimo:1
IPB60R099C6
IPB60R099C6

Infineon

D2PAK (TO-263)

High voltage N-channel CoolMOS C6 MOSFET with 38A current handling

nrnd
In magazzino: 4.525   PZ Minimo:1
IPB065N15N3G
IPB065N15N3G

Infineon

D2PAK 7pin (TO-263 7pin)

65N15N3 G, Trans MOSFET N-CH 150V 130A 7-Pin(6+Tab) D2PAK T/R" without using quotation marks:

In magazzino: 4.828   PZ Minimo:1
IPB057N06N
IPB057N06N

Infineon

D2PAK (TO-263)

IPB057N06N: N-Channel MOSFET Technology

In magazzino: 7.309   PZ Minimo:1
BSZ16DN25NS3G
BSZ16DN25NS3G

Infineon Technologies Corporation

TSDSON-8

High-voltage switching for demanding applications

In magazzino: 7.474   PZ Minimo:1
BSZ160N10NS3G
BSZ160N10NS3G

Infineon

PQFN 3.3 x 3.3

Green Plastic N-Channel MOSFET, 8 Amperes Drain Current, 100 Volts Drain-to-Source Voltage, 0.016ohm Drain-Source On-Resistance, TDSON-8 Package

In magazzino: 5.718   PZ Minimo:1
BSZ123N08NS3G
BSZ123N08NS3G

Infineon Technologies Corporation

TSDSON-8

Transistor MOSFET with N-channel configuration, capable of handling up to 80 volts and 10 amperes, packaged in 8-pin TSDSON EP

In magazzino: 4.565   PZ Minimo:1
BSZ086P03NS3G
BSZ086P03NS3G

Infineon Technologies Corporation

TSDSON-8

P-Ch MOSFET with -30V voltage rating and 13.5A current rating in TSDSON-8 package

In magazzino: 5.951   PZ Minimo:1
BSZ067N06LS3G
BSZ067N06LS3G

Infineon Technologies Corporation

TSDSON-8

MOSFET with OptiMOS 3 technology and TSDSON-8 package, featuring N-channel design with 60V voltage rating and 20A current handling capability

In magazzino: 6.330   PZ Minimo:1
BSZ024N04LS6
BSZ024N04LS6

Infineon Technologies Corporation

SON

Trench-gate technology for efficient switchin

In magazzino: 7.301   PZ Minimo:1
BSP149
BSP149

Infineon

SOT-223

High-power electronic switching devices for efficient voltage control

obsolete
In magazzino: 7.694   PZ Minimo:1
BSP129
BSP129

Infineon Technologies Corporation

SOT-223-4

MOSFET N-Channel Depletion MOSFETs (60 V to 600 V)

obsolete
In magazzino: 6.245   PZ Minimo:1
BSC520N15NS3G
BSC520N15NS3G

Infineon Technologies Corporation

TDSON-8

N-channel power MOSFET with a voltage rating of 150V and a current rating of 21A in a TDSON-8 package

In magazzino: 6.777   PZ Minimo:1
BSC340N08NS3G
BSC340N08NS3G

Infineon Technologies Corporation

TDSON-8

N-channel power MOSFET rated for automotive applications with a maximum voltage of 80V and a current capacity of 7A

In magazzino: 4.485   PZ Minimo:1
BSC320N20NS3G
BSC320N20NS3G

Infineon Technologies Corporation

TDSON-8

A top-notch choice for high-voltage switching requirements, this chip deliver

In magazzino: 5.125   PZ Minimo:1
BSC110N06NS3G
BSC110N06NS3G

Infineon Technologies Corporation

TDSON-8

OptiMOS 3 technology enables low conduction losses and high efficiency

In magazzino: 5.792   PZ Minimo:1
BSC080N03LSG
BSC080N03LSG

Infineon Technologies Corporation

QFN

0 Volt N-CHANNEL Power MOSFET with 0.012 ohm

End Of Life
In magazzino: 4.925   PZ Minimo:1