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W9864G6JT-6I +BOM

Low-power consumption and high-speed data transfer make this chip an ideal choic

  • Produttore:

    WINBOND ELECTRONICS CORP

  • ProduttorePart #:

    W9864G6JT-6I

  • Scheda dati:

    W9864G6JT-6I Scheda dati (PDF) pdf-icon

  • Part Life Cycle Code:

    Not Recommended

  • Pin Count:

    54

  • Reach Compliance Code:

    compliant

  • ECCN Code:

    EAR99

W9864G6JT-6I Descrizione generale

Engineered for performance, the W9864G6JT-6I is a 64Mb synchronous DRAM (SDRAM) chip that delivers exceptional speed and efficiency. With a capacity of 8MB and operating at 166MHz, it provides reliable data processing capabilities for a wide range of electronic devices. Its standard TSOP II package ensures easy installation, making it a preferred choice for manufacturers seeking a high-quality memory solution

Caratteristiche principali

  • 3.3V ± 0.3V Power Supply
  • Up to 166 MHz Clock Frequency
  • 1,048,576 Words  4 banks  16 bits organization
  • Self Refresh Mode
  • CAS Latency: 2 and 3
  • Burst Length: 1, 2, 4, 8 and full page
  • Sequential and Interleave Burst
  • Burst Read, Single Writes Mode
  • Byte Data Controlled by LDQM, UDQM
  • Auto-precharge and Controlled Precharge
  • 4K Refresh cycles/64 mS, @ -40°C ≤ TA / TCASE ≤ 85°C
  • 4K Refresh cycles/16 mS, @ 85°C
  • Interface: LVTTL
  • Packaged in TFBGA 54 Ball (8x8 mm2), using lead free materials with RoHS compliant
  • Not support self refresh function with TA / TCASE> 85°C

Specifiche

Part Life Cycle Code Not Recommended Pin Count 54
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8542.32.00.02 Access Mode FOUR BANK PAGE BURST
Access Time-Max 5 ns Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz I/O Type COMMON
Interleaved Burst Length 1,2,4,8 JESD-30 Code S-PBGA-B54
Length 8 mm Memory Density 67108864 bit
Memory IC Type SYNCHRONOUS DRAM Memory Width 16
Number of Functions 1 Number of Ports 1
Number of Terminals 54 Number of Words 4194304 words
Number of Words Code 4000000 Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C Operating Temperature-Min -40 °C
Organization 4MX16 Output Characteristics 3-STATE
Peak Reflow Temperature (Cel) NOT SPECIFIED Power Supplies 3.3 V
Qualification Status Not Qualified Refresh Cycles 4096
Seated Height-Max 1.2 mm Self Refresh YES
Sequential Burst Length 1,2,4,8,FP Standby Current-Max 0.002 A
Supply Current-Max 0.075 mA Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES Technology CMOS
Temperature Grade INDUSTRIAL Terminal Form BALL
Terminal Pitch 0.8 mm Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Width 8 mm
Programmabe Not Verified Memory Type Volatile
Memory Format DRAM Memory Size 64Mbit
Memory Organization 4M x 16 Memory Interface LVTTL
Clock Frequency 166 MHz Access Time 5 ns
Voltage - Supply 3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount Base Product Number W9864G6

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