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W971GG8JB-25 +BOM

Product W971GG8JB-25 is manufactured by Winbond Electronics Corporation

Produttore:

WINBOND ELECTRONICS CORP
ProduttorePart #:

W971GG8JB-25
Scheda dati:

W971GG8JB-25 Scheda dati (PDF)
Part Life Cycle Code:

Active
Pin Count:

60
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per W971GG8JB-25

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

W971GG8JB-25 Descrizione generale

SDRAM - DDR2 Memory IC 1Gbit Parallel 200 MHz 57.5 ns 60-WBGA (8x12.5)

Caratteristiche principali

Power Supply: VDD, VDDQ = 1.8 V0.1 V

Double Data Rate architecture: two data transfers per clock cycle

CAS Latency: 3, 4, 5, 6 and 7

Burst Length: 4 and 8

Bi-directional, differential data strobes (DQS and DQS ) are transmitted / received with data

Edge-aligned with Read data and center-aligned with Write data

DLL aligns DQ and DQS transitions with clock

Differential clock inputs (CLK and CLK )

Data masks (DM) for write data.

Commands entered on each positive CLK edge, data and data mask are referenced to both edges of DQS

Posted CAS programmable additive latency supported to make command and data bus efficiency

Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)

Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality

Auto-precharge operation for read and write bursts

Auto Refresh and Self Refresh modes

Precharged Power Down and Active Power Down

Write Data Mask

Write Latency = Read Latency - 1 (WL = RL - 1)

Interface: SSTL_18

Packaged in WBGA 60 Ball (8x12.5 mm2), using Lead free materials with RoHS compliant

Specifiche

Part Life Cycle Code	Active	Pin Count	60
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8542.32.00.02	Access Mode	MULTI BANK PAGE BURST
Access Time-Max	0.4 ns	Additional Feature	AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)	400 MHz	I/O Type	COMMON
Interleaved Burst Length	4,8	JESD-30 Code	R-PBGA-B60
Length	12.5 mm	Memory Density	134217728 bit
Memory IC Type	DDR2 DRAM	Memory Width	8
Number of Functions	1	Number of Ports	1
Number of Terminals	60	Number of Words	16777216 words
Number of Words Code	16000000	Operating Mode	SYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min
Organization	16MX8	Output Characteristics	3-STATE
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Power Supplies	1.8 V
Qualification Status	Not Qualified	Refresh Cycles	8192
Seated Height-Max	1.2 mm	Self Refresh	YES
Sequential Burst Length	4,8	Supply Current-Max	0.18 mA
Supply Voltage-Max (Vsup)	1.9 V	Supply Voltage-Min (Vsup)	1.7 V
Supply Voltage-Nom (Vsup)	1.8 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	OTHER
Terminal Form	BALL	Terminal Pitch	0.8 mm
Terminal Position	BOTTOM	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Width	8 mm

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