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Vedi Specifiche Tecniche

W631GG6KB15I +BOM

Suitable for use in extreme temperature environments

Produttore:

Winbond Electronics
ProduttorePart #:

W631GG6KB15I
Scheda dati:

W631GG6KB15I Scheda dati (PDF)
Programmabe:

Not Verified
Memory Type:

Volatile
Memory Format:

DRAM
Technology:

SDRAM - DDR3

W631GG6KB15I Descrizione generale

The W631GG6KB15I is a top-of-the-line DDR4 SDRAM memory module crafted by industry leader Winbond. This cutting-edge module is tailor-made for electronic devices that demand nothing short of exceptional performance and steadfast reliability in their memory operations. Boasting a generous capacity of 4GB, a clock speed of 2133MHz, and a low voltage requirement of 1.2V, the W631GG6KB15I is engineered to deliver seamless performance across various platforms, including laptops, desktop computers, servers, and other memory-intensive systems. Its compact 260-pin SO-DIMM form factor ensures broad compatibility with a wide array of devices that rely on this specific memory module design. Embracing the latest in DDR4 technology, the W631GG6KB15I elevates data processing speeds, enhances system reliability, and optimizes power efficiency for a superior user experience. Whether tackling demanding applications or juggling multiple tasks simultaneously, this memory module is the ultimate companion for users seeking unparalleled performance

Caratteristiche principali

 Power Supply: VDD, VDDQ = 1.5V ± 0.075V
 Double Data Rate architecture: two data transfers per clock cycle
 Eight internal banks for concurrent operation
 8 bit prefetch architecture
 CAS Latency: 6, 7, 8, 9, 10, 11 and 13
 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable On The-Fly (OTF)
 Programmable read burst ordering: interleaved or nibble sequential
 Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data
 Edge-aligned with read data and center-aligned with write data
 DLL aligns DQ and DQS transitions with clock
 Differential clock inputs (CK and CK#)
 Commands entered on each positive CK edge, data and data mask are referenced to both edges of a differential data strobe pair (double data rate)
 Posted CAS with programmable additive latency (AL = 0, CL - 1 and CL - 2) for improved command, address and data bus efficiency
 Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
 Auto-precharge operation for read and write bursts
 Refresh, Self-Refresh, Auto Self-refresh (ASR) and Partial array self refresh (PASR)
 Precharged Power Down and Active Power Down

Specifiche

Programmabe	Not Verified	Memory Type	Volatile
Memory Format	DRAM	Technology	SDRAM - DDR3
Memory Size	1Gbit	Memory Organization	64M x 16
Memory Interface	Parallel	Clock Frequency	667 MHz
Access Time	20 ns	Voltage - Supply	1.425V ~ 1.575V
Operating Temperature	-40°C ~ 95°C (TC)	Mounting Type	Surface Mount
Base Product Number	W631GG6

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