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Vedi Specifiche Tecniche

W25M512JVBIQ +BOM

12M-bit, 4Kb Uniform Sector, W25M512JVBIQ, product

Produttore:

Winbond Electronics
ProduttorePart #:

W25M512JVBIQ
Scheda dati:

W25M512JVBIQ Scheda dati (PDF)
Series:

SpiFlash®
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per W25M512JVBIQ

W25M512JVBIQ Descrizione generale

The W25M512JVBIQ is a high-performance serial NOR flash memory device that has been carefully engineered to meet the demands of modern electronic applications. Equipped with a 512Mbit capacity and a fast random access time of 70ns, this flash memory chip offers seamless data storage and retrieval capabilities. Its quad SPI interface enables high-speed data transfer up to 166MHz, making it ideal for applications that require swift communication between devices. The W25M512JVBIQ also prioritizes data security with features such as hardware write protection and OTP security registers, ensuring that sensitive information remains safeguarded. With a wide operating temperature range and compact form factor, this flash memory device is well-suited for a variety of industrial and automotive applications. Whether used in consumer electronics, automotive systems, or industrial machinery, the W25M512JVBIQ delivers reliable performance and efficient data storage solutions

Caratteristiche principali

New Family of SpiFlash Memories
– W25M02GV: 2x1G-bit / 2x128M-byte
– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
– Compatible SPI serial flash commands
Highest Performance Serial NAND Flash
– 104MHz Standard/Dual/Quad SPI clocks
– 208/416MHz equivalent Dual/Quad SPI
– 50MB/S continuous data transfer rate
– Fast Program/Erase performance
– More than 100,000 erase/program cycles
– More than 10-year data retention
Efficient “Continuous Read Mode”(1)
– Alternative method to the Buffer Read Mode
– No need to issue “Page Data Read” between
Read commands
– Allows direct read access to the entire array
Flexible “Concurrent Operations”
– Independent single die access
– Allows “Read while Program/Erase”
– Allows “Multi Die Program/Erase”
– Improves Program/Erase throughput
Low Power, Wide Temperature Range
– Single 2.7 to 3.6V supply
– 25mA active, 20µA standby current
– -40°C to +85°C operating range
Flexible Architecture with 128KB blocks
– Uniform 128K-Byte Block Erase
– Flexible page data load methods
Advanced Features
– On chip 1-Bit ECC for memory array
– ECC status bits indicate ECC results
– bad block management and LUT(2) access
– Software and Hardware Write-Protect
– Power Supply Lock-Down and OTP protection
– 2KB Unique ID and 2KB parameter pages
– Ten 2KB OTP pages(3)
Space Efficient Packaging
– 8-pad WSON 8x6-mm
– 24-ball TFBGA 8x6-mm
– Contact Winbond for other package options

Specifiche

Series	SpiFlash®	Programmabe	Not Verified
Memory Type	Non-Volatile	Memory Format	FLASH
Technology	FLASH - NOR	Memory Size	512Mbit
Memory Organization	64M x 8	Memory Interface	SPI
Clock Frequency	104 MHz	Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Base Product Number	W25M512

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