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UCC21750DW +BOM

Rugged construction for reliable operatio

UCC21750DW Descrizione generale

Featuring SiO2 capacitive isolation technology, the UCC21750DW provides a high level of isolation between the input and output sides, supporting up to 1.5-kV RMS working voltage. With exceptional surge immunity of 12.8-kV PK and a long isolation barrier life exceeding 40 years, this driver guarantees utmost safety and reliability in high-voltage environments. Additionally, it boasts low part-to-part skew and superior common mode noise immunity of over 150-V/ns, ensuring stable and precise operation under varying conditions

Caratteristiche principali

  • 5.7-kVRMS single channel isolated gate driver
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33-V maximum output drive voltage (VDD – VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 200-ns response time fast DESAT protection
  • 4-A Internal active miller clamp
  • 400-mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable and disable response on RST/EN
  • Reject < 40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • Reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)
    • UL 1577 component recognition program

Specifiche

Source Content uid UCC21750DW Pbfree Code Yes
Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.39.00.01
High Side Driver NO Interface IC Type BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 Code R-PDSO-G16 Moisture Sensitivity Level 2
Number of Channels 1 Number of Functions 1
Number of Terminals 16 Peak Reflow Temperature (Cel) 260
Surface Mount YES Temperature Grade AUTOMOTIVE
Terminal Finish NICKEL PALLADIUM GOLD Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Number of channels 1 Isolation rating Reinforced
Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121
Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, SiCFET
Peak output current (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off
Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13
Input VCC (min) (V) 3 Input VCC (max) (V) 5.5
Propagation delay time (µs) 0.09 Input threshold CMOS
Operating temperature range (°C) -40 to 125 Rating Catalog
Bus voltage (max) (V) 2121 Rise time (ns) 33
Fall time (ns) 27 Undervoltage lockout (typ) (V) 12

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