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Vedi Specifiche Tecniche

TLV522DGKR +BOM

Dual high performance Operational Amplifier for low power applications

Produttore:

Texas Instruments
ProduttorePart #:

TLV522DGKR
Scheda dati:

TLV522DGKR Scheda dati (PDF)
Number Of Channels:

2
Total Supply Voltage (+5 V = 5, ±5 V = 10) (max) (V):

5.5
Total Supply Voltage (+5 V = 5, ±5 V = 10) (min) (V):

1.7
Rail-to-rail:

In, Out
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per TLV522DGKR

TLV522DGKR Descrizione generale

The TLV522DGKR by Texas Instruments is a low-power operational amplifier (op-amp) that perfectly balances high performance with minimal power consumption. As part of the TLVx22 series of precision op-amps, this op-amp is engineered to offer top-notch performance and energy efficiency. Its dual-channel design, with each channel capable of functioning from a single supply voltage as low as 1.8V, makes it an ideal choice for battery-powered applications. With a gain bandwidth product (GBW) of 10 MHz and a slew rate of 6 V/µs, the TLV522DGKR delivers rapid and stable performance in a wide range of signal processing applications. Its rail-to-rail input and output capabilities ensure that signals are amplified with minimal distortion and maximum dynamic range. Furthermore, its small and space-saving MSOP-8 package makes it a perfect fit for designs with limited board space. Designed to operate over a wide temperature range of -40°C to 125°C, the TLV522DGKR is suitable for various industrial and consumer applications

Caratteristiche principali

Excellent Linearity Achieved
Low Distortion Guaranteed
Wide Frequency Range Supported

Applicazione

Perfect for wearables
Small package size
Suitable for medical devices

Specifiche

Number of channels	2	Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)	5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)	1.7	Rail-to-rail	In, Out
GBW (typ) (MHz)	0.008	Slew rate (typ) (V/µs)	0.0037
Vos (offset voltage at 25°C) (max) (mV)	4	Iq per channel (typ) (mA)	0.0005
Vn at 1 kHz (typ) (nV√Hz)	300	Rating	Catalog
Operating temperature range (°C)	-40 to 125	Offset drift (typ) (µV/°C)	1.5
Features	Cost Optimized, EMI Hardened	CMRR (typ) (dB)	90
Iout (typ) (A)	0.005	Architecture	CMOS
Input common mode headroom (to negative supply) (typ) (V)	0.0008	Input common mode headroom (to positive supply) (typ) (V)	0.0005
Output swing headroom (to negative supply) (typ) (V)	0.002	Output swing headroom (to positive supply) (typ) (V)	-0.003

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