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RC28F640P33TF60A +BOM

High-speed NOR flash memory for reliable data storage and retrieva

Produttore:

MICRON TECHNOLOGY INC
ProduttorePart #:

RC28F640P33TF60A
Scheda dati:

RC28F640P33TF60A Scheda dati (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Obsolete
Pin Count:

64
Reach Compliance Code:

not_compliant
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per RC28F640P33TF60A

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

RC28F640P33TF60A Descrizione generale

Intel's RC28F640P33TF60A is a cutting-edge flash memory chip designed to meet the demands of today's technology-driven world. With a capacity of 64Mb (8MB) and advanced features such as a high-speed serial interface and low supply voltage, it is optimized for use in networking devices, industrial equipment, and automotive systems. Its support for both Synchronous Burst Read and Asynchronous Page Read operations offers versatility, while its advanced security features provide robust data protection. Whether it's for high-performance industrial applications or secure automotive systems, this flash memory chip delivers the reliability and efficiency needed for success

Caratteristiche principali

High performance
— 85 ns initial access
— 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode
— 25 ns asynchronous-page read mode
— 4-, 8-, 16-, and continuous-word burst mode
— Buffered Enhanced Factory Programming (BEFP) at 5 μs/ byte (Typ)
— 1.8 V buffered programming at 7 μs/byte (Typ)
Architecture
— Multi-Level Cell Technology: Highest Density at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or bottom configuration
— 128-KByte main blocks
Voltage and Power
— VCC (core) voltage: 1.7 V – 2.0 V
— VCCQ (I/O) voltage: 1.7 V – 3.6 V
— Standby current: 20μA (Typ) for 64-Mbit
— 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology
Security
— One-Time Programmable Registers:
64 unique factory device identifier bits
2112 user-programmable OTP bits
— Selectable OTP Space in Main Array:
Four pre-defined 128-KByte blocks (top or bottom configuration)
Up to Full Array OTP Lockout
— Absolute write protection: VPP = VSS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
Software
— 20 μs (Typ) program suspend
— 20 μs (Typ) erase suspend
— Numonyx™ Flash Data Integrator optimized
— Basic Command Set and Extended Command Set compatible
— Common Flash Interface capable
Density and Packaging
— 56- Lead TSOP package (64, 128, 256, 512- Mbit)
— 64- Ball Numonyx™ Easy BGA package (64, 128, 256, 512- Mbit)
— Numonyx™ QUAD+ SCSP (64, 128, 256, 512- Mbit)
— 16-bit wide data bus

Specifiche

Pbfree Code	No	Part Life Cycle Code	Obsolete
Pin Count	64	Reach Compliance Code	not_compliant
ECCN Code	EAR99	HTS Code	8542.32.00.51
Access Time-Max	60 ns	Additional Feature	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
Boot Block	TOP	Command User Interface	YES
Common Flash Interface	YES	Data Polling	NO
JESD-30 Code	R-PBGA-B64	JESD-609 Code	e0
Length	10 mm	Memory Density	67108864 bit
Memory IC Type	FLASH	Memory Width	16
Number of Functions	1	Number of Sectors/Size	4,63
Number of Terminals	64	Number of Words	4194304 words
Number of Words Code	4000000	Operating Mode	ASYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	4MX16	Page Size	8 words
Parallel/Serial	PARALLEL	Power Supplies	2.5/3.3 V
Programming Voltage	3 V	Qualification Status	Not Qualified
Seated Height-Max	1.2 mm	Sector Size	16K,64K
Standby Current-Max	0.002 A	Supply Current-Max	0.028 mA
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	2.3 V
Supply Voltage-Nom (Vsup)	3 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Finish	TIN LEAD SILVER	Terminal Form	BALL
Terminal Pitch	1 mm	Terminal Position	BOTTOM
Toggle Bit	NO	Type	NOR TYPE
Width	8 mm

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