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Module for Intelligent Power
Power ModuleProduttore:
ProduttorePart #:
PM75RL1A120
Scheda dati:
Product:
IGBT Silicon Modules
Configuration:
7-Pack
Collector- Emitter Voltage VCEO Max:
1.2 kV
Collector-Emitter Saturation Voltage:
1.65 V
EDA/CAD Modelli:
Compila il breve modulo sottostante e ti forniremo immediatamente il preventivo.
The PM75RL1A120 power module, manufactured by Mitsubishi Electric, is a true powerhouse in the industrial sector. With a maximum voltage rating of 1200V and a current rating of 75A, this insulated gate bipolar transistor (IGBT) module is a force to be reckoned with. Its high reliability and efficiency, hallmarks of the PM series, make it an invaluable asset in industrial applications such as motor drives, inverters, and power supplies. Safety and performance are paramount in the design of the PM75RL1A120, as evidenced by its built-in temperature sensor and overcurrent protection. This innovative power module also boasts low on-state voltage drop and low switching loss, delivering unrivaled efficiency and power handling capabilities. Furthermore, its compact and lightweight design, coupled with a wide operating temperature range, ensures seamless integration and top-notch performance in diverse environmental conditions
Product Category | IGBT Modules | Product | IGBT Silicon Modules |
Configuration | 7-Pack | Collector- Emitter Voltage VCEO Max | 1.2 kV |
Collector-Emitter Saturation Voltage | 1.65 V | Continuous Collector Current at 25 C | 75 A |
Pd - Power Dissipation | 595 W | Minimum Operating Temperature | - 20 C |
Maximum Operating Temperature | + 150 C | Mounting Style | Screw Mount |
Product Type | IGBT Modules | Factory Pack Quantity | 10 |
Subcategory | IGBTs |
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Prodotto 365 giorni
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great price for.the products. items look as posted.