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Vedi Specifiche Tecniche

MT29F64G08AJABAWP:B +BOM

Integrated circuit with flash memory capacity of 8 gigabits structured in an 8x8 layout

Produttore:

Micron Technology Inc.
ProduttorePart #:

MT29F64G08AJABAWP:B
Scheda dati:

MT29F64G08AJABAWP:B Scheda dati (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NAND
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per MT29F64G08AJABAWP:B

MT29F64G08AJABAWP:B Descrizione generale

The MT29F64G08AJABAWP:B from Micron Technology is a cutting-edge NAND Flash memory device that packs an impressive 64GB of storage capacity. Its utilization of NAND technology ensures swift data transfer speeds and dependable performance, making it an ideal choice for a multitude of electronic devices ranging from smartphones to digital cameras. With a synchronous interface and voltage range of 2.7V to 3.6V, this device is primed for seamless integration into various applications. Additionally, its 2KB page size and 128-page block size cater to efficient data handling, while its support for on-chip ECC and wear leveling functionalities elevate data reliability and longevity. Altogether, the MT29F64G08AJABAWP:B embodies a perfect balance of capacity, performance, and durability, making it a standout solution in the realm of NAND Flash memory technology

Caratteristiche principali

Open NAND Flash Interface (ONFI) 2.2-compliant1
Multiple-level cell (MLC) technology
Organization
– Page size x8: 8640 bytes (8192 + 448 bytes)
– Block size: 256 pages (2048K + 112K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 64Gb: 4096 blocks;
128Gb: 8192 blocks;
256Gb: 16,384 blocks;
512Gb: 32,786 blocks
Synchronous I/O performance
– Up to synchronous timing mode 5
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
Asynchronous I/O performance
– Up to asynchronous timing mode 5
tRC/tWC: 20ns (MIN)
Array performance
– Read page: 50µs (MAX)
– Program page: 1300µs (TYP)
– Erase block: 3ms (TYP)
Operating Voltage Range
– VCC: 2.7–3.6V
– VCCQ: 1.7–1.95V, 2.7–3.6V
Command set: ONFI NAND Flash Protocol
Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
First block (block address 00h) is valid when shipped
from factory. For minimum required ECC, see
Error Management (page 109).
RESET (FFh) required as first command after power
Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
Data strobe (DQS) signals provide a hardware method
for synchronizing data DQ in the synchronous
interface
Copyback operations supported within the plane
from which data is read
Quality and reliability
– Data retention: 10 years
– Endurance: 5000 PROGRAM/ERASE cycles
Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
Package
– 52-pad LGA
– 48-pin TSOP
– 100-ball BGA

Specifiche

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NAND
Memory Size	64Gbit	Memory Organization	8G x 8
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	-	Access Time	-
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	0°C ~ 70°C (TA)
Mounting Type	Surface Mount

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