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MT29F2G16ABAEAWP:E +BOM

SLC NAND Flash 3.3V 2G-bit 128M x 16

Produttore:

Micron Technology Inc.
ProduttorePart #:

MT29F2G16ABAEAWP:E
Scheda dati:

MT29F2G16ABAEAWP:E Scheda dati (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
HTS Code:

8542.32.00.51
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per MT29F2G16ABAEAWP:E

MT29F2G16ABAEAWP:E Descrizione generale

The MT29F2G16ABAEAWP:E NAND flash memory device from Micron Technology is a powerful storage solution with a capacity of 2GB (16Gb). Its 3.3V supply voltage ensures efficient performance, while its synchronous interface allows for seamless data transfer. With a page size of 4KB, this device is optimized for fast processing speeds, making it ideal for a wide range of applications, including smartphones, tablets, digital cameras, and other portable electronic devices

Caratteristiche principali

Open NAND Flash Interface (ONFI) 2.2-compliant1
Multiple-level cell (MLC) technology
Organization
– Page size x8: 8640 bytes (8192 + 448 bytes)
– Block size: 256 pages (2048K + 112K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 64Gb: 4096 blocks;
128Gb: 8192 blocks;
256Gb: 16,384 blocks;
512Gb: 32,786 blocks
Synchronous I/O performance
– Up to synchronous timing mode 5
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
Asynchronous I/O performance
– Up to asynchronous timing mode 5
tRC/tWC: 20ns (MIN)
Array performance
– Read page: 50µs (MAX)
– Program page: 1300µs (TYP)
– Erase block: 3ms (TYP)
Operating Voltage Range
– VCC: 2.7–3.6V
– VCCQ: 1.7–1.95V, 2.7–3.6V
Command set: ONFI NAND Flash Protocol
Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
First block (block address 00h) is valid when shipped
from factory. For minimum required ECC, see
Error Management (page 109).
RESET (FFh) required as first command after power
Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
Data strobe (DQS) signals provide a hardware method
for synchronizing data DQ in the synchronous
interface
Copyback operations supported within the plane
from which data is read
Quality and reliability
– Data retention: 10 years
– Endurance: 5000 PROGRAM/ERASE cycles
Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
Package
– 52-pad LGA
– 48-pin TSOP
– 100-ball BGA

Specifiche

Part Life Cycle Code	Obsolete	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.51
Access Time-Max	25 ns	Command User Interface	YES
Data Polling	NO	JESD-30 Code	R-PDSO-G48
Length	18.4 mm	Memory Density	2147483648 bit
Memory IC Type	FLASH	Memory Width	16
Number of Functions	1	Number of Sectors/Size	2K
Number of Terminals	48	Number of Words	134217728 words
Number of Words Code	128000000	Operating Mode	ASYNCHRONOUS
Operating Temperature-Max	70 °C	Operating Temperature-Min
Organization	128MX16	Page Size	1K words
Parallel/Serial	PARALLEL	Programming Voltage	2.7 V
Qualification Status	Not Qualified	Ready/Busy	YES
Seated Height-Max	1.2 mm	Sector Size	64K
Standby Current-Max	0.0001 A	Supply Current-Max	0.035 mA
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	2.7 V
Supply Voltage-Nom (Vsup)	3.3 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	COMMERCIAL
Terminal Form	GULL WING	Terminal Pitch	0.5 mm
Terminal Position	DUAL	Toggle Bit	NO
Type	SLC NAND TYPE	Width	12 mm

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