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Vedi Specifiche Tecniche

MT29F2G01ABAGDWB-IT:G TR +BOM

FLASH - NAND Memory IC 2Gbit SPI 8-UPDFN (8x6) (MLP8)

Produttore:

Micron Technology Inc.
ProduttorePart #:

MT29F2G01ABAGDWB-IT:G TR
Scheda dati:

MT29F2G01ABAGDWB-IT:G TR Scheda dati (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NAND
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per MT29F2G01ABAGDWB-IT:G TR

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

MT29F2G01ABAGDWB-IT:G TR Descrizione generale

Utilizing NAND technology, this flash memory chip delivers lightning-fast read and write speeds, making it effortless to store and access large volumes of data. Its compact design ensures compatibility with space-restricted devices without compromising on performance or reliability

Caratteristiche principali

Open NAND Flash Interface (ONFI) 2.2-compliant1
Multiple-level cell (MLC) technology
Organization
– Page size x8: 8640 bytes (8192 + 448 bytes)
– Block size: 256 pages (2048K + 112K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 64Gb: 4096 blocks;
128Gb: 8192 blocks;
256Gb: 16,384 blocks;
512Gb: 32,786 blocks
Synchronous I/O performance
– Up to synchronous timing mode 5
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
Asynchronous I/O performance
– Up to asynchronous timing mode 5
tRC/tWC: 20ns (MIN)
Array performance
– Read page: 50µs (MAX)
– Program page: 1300µs (TYP)
– Erase block: 3ms (TYP)
Operating Voltage Range
– VCC: 2.7–3.6V
– VCCQ: 1.7–1.95V, 2.7–3.6V
Command set: ONFI NAND Flash Protocol
Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
First block (block address 00h) is valid when shipped
from factory. For minimum required ECC, see
Error Management (page 109).
RESET (FFh) required as first command after power
Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
Data strobe (DQS) signals provide a hardware method
for synchronizing data DQ in the synchronous
interface
Copyback operations supported within the plane
from which data is read
Quality and reliability
– Data retention: 10 years
– Endurance: 5000 PROGRAM/ERASE cycles
Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
Package
– 52-pad LGA
– 48-pin TSOP
– 100-ball BGA

Specifiche

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NAND
Memory Size	2Gbit	Memory Organization	2G x 1
Memory Interface	SPI	Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Base Product Number	MT29F2G01

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