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M25PE80-VMW6TG +BOM

NOR Flash memory with serial page erase function, 8 Mbit capacity

Produttore:

MICRON
ProduttorePart #:

M25PE80-VMW6TG
Scheda dati:

M25PE80-VMW6TG Scheda dati (PDF)
Part Life Cycle Code:

Transferred
Pin Count:

8
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per M25PE80-VMW6TG

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

M25PE80-VMW6TG Descrizione generale

STMicroelectronics' M25PE80-VMW6TG stands out as a dependable serial NOR Flash memory device, offering a generous 8 megabits of storage capacity to address the diverse data storage requirements across different industries. With a high-speed clock frequency of up to 133 MHz, this flash memory chip delivers swift read and write operations, meeting the need for rapid data access and transfer. Its broad operating voltage range of 2.7V to 3.6V ensures compatibility with various systems, making it a versatile solution for different applications. The device's industry-standard 8-pin SOIC package allows for easy integration into circuit boards and compact designs, contributing to efficient system layouts. Additionally, the M25PE80-VMW6TG incorporates advanced features such as sector and block erase, program suspend/resume, and security measures, providing robust performance and data protection. This makes it well-suited for applications in industries such as automotive, industrial automation, consumer electronics, and telecommunications, where reliable and secure data storage is crucial

Caratteristiche principali

SPI bus compatible serial interface
8-Mbit Page-Erasable Flash memory
Page size: 256 bytes
– Page Write in 11 ms (typical)
– Page Program in 0.8 ms (typical)
– Page Erase in 10 ms (typical)
SubSector Erase (4 Kbytes)
Sector Erase (64 Kbytes)
Bulk Erase (8 Mbits)
2.7 V to 3.6 V single supply voltage
50 MHz clock rate (maximum)
Deep Power-down mode 1 µA (typical)
Electronic Signature
– JEDEC standard two-byte signature(8014h)
Software Write Protection on a 64 Kbyte sector basis
Hardware Write Protection of the memory area selected using the BP0, BP1 and BP2 bits
More than 100 000 Write cycles
More than 20 year data retention
Packages
– ECOPACK® (RoHS compliant)

Specifiche

Source Content uid	M25PE80-VMW6TG	Part Life Cycle Code	Transferred
Pin Count	8	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.51
Clock Frequency-Max (fCLK)	50 MHz	Data Retention Time-Min	20
Endurance	100000 Write/Erase Cycles	JESD-30 Code	R-PDSO-G8
JESD-609 Code	e4	Length	5.3 mm
Memory Density	8388608 bit	Memory IC Type	FLASH
Memory Width	8	Moisture Sensitivity Level	1
Number of Functions	1	Number of Terminals	8
Number of Words	1048576 words	Number of Words Code	1000000
Operating Mode	SYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	1MX8
Parallel/Serial	SERIAL	Peak Reflow Temperature (Cel)	260
Programming Voltage	2.7 V	Qualification Status	Not Qualified
Seated Height-Max	2.5 mm	Serial Bus Type	SPI
Standby Current-Max	0.00001 A	Supply Current-Max	0.015 mA
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	2.7 V
Supply Voltage-Nom (Vsup)	3 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)	Terminal Form	GULL WING
Terminal Pitch	1.27 mm	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	40	Type	NOR TYPE
Width	5.59 mm	Write Cycle Time-Max (tWC)	23 ms
Write Protection	HARDWARE/SOFTWARE

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