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LF356M/NOPB +BOM

IC optimized for single operational amplifier operations, utilizing JFET technology for a bandwidth of 5MHz and a current consumption of 5mA

Produttore:

Texas Instruments
ProduttorePart #:

LF356M/NOPB
Scheda dati:

LF356M/NOPB Scheda dati (PDF)
Number Of Channels:

1
Total Supply Voltage (+5 V = 5, ±5 V = 10) (max) (V):

36
Total Supply Voltage (+5 V = 5, ±5 V = 10) (min) (V):

10
Rail-to-rail:

In to V+
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per LF356M/NOPB

LF356M/NOPB Descrizione generale

The LF356M/NOPB is a top-of-the-line operational amplifier that sets the standard for performance in the LFx5x series. With its integrated high-voltage JFETs and bipolar transistors, this amplifier offers unparalleled precision and reliability. Its low input bias and offset currents, paired with offset adjust functionality, ensure that the LF356M/NOPB maintains exceptional accuracy over time. This amplifier is not only known for its fast settling time and wide bandwidth, but also for its low voltage and current noise. The high input impedance, combined with a low input bias current and offset current, make this amplifier ideal for a wide range of applications. Furthermore, the LF356M/NOPB boasts a high common-mode rejection ratio and a large DC voltage gain, providing users with the versatility they need for any project

Caratteristiche principali

High-Speed Analog-to-Digital Conversion
Precise Timing Control
Minimum Jitter and Noise Generation
Maximum Data Integrity

Applicazione

LF356M/NOPB is perfect for audio amplifiers
Use LF356M/NOPB for precision instrumentation
LF356M/NOPB excels in low-noise circuits

Specifiche

Number of channels	1	Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)	36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)	10	Rail-to-rail	In to V+
GBW (typ) (MHz)	5	Slew rate (typ) (V/µs)	12
Vos (offset voltage at 25°C) (max) (mV)	10	Iq per channel (typ) (mA)	5
Vn at 1 kHz (typ) (nV√Hz)	12	Rating	Catalog
Operating temperature range (°C)	0 to 70	Offset drift (typ) (µV/°C)	3
Input bias current (max) (pA)	8000	CMRR (typ) (dB)	100
Iout (typ) (A)	0.025	Architecture	FET
Input common mode headroom (to negative supply) (typ) (V)	3	Input common mode headroom (to positive supply) (typ) (V)	0.1
Output swing headroom (to negative supply) (typ) (V)	2	Output swing headroom (to positive supply) (typ) (V)	-2

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