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IXGH32N60CD1 +BOM

60 Amps IGBT Transistors with 600V

Produttore:

Ixys
ProduttorePart #:

IXGH32N60CD1
Scheda dati:

IXGH32N60CD1 Scheda dati (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

600 V
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IXGH32N60CD1

E-mail: [email protected]

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IXGH32N60CD1 Descrizione generale

The IXGH32N60CD1 is a high voltage, high-speed insulated gate bipolar transistor (IGBT) designed for power electronic applications. It features a collector current of 32A, a collector-emitter voltage of 600V, and a continuous collector current of 46A. With a short-circuit SOA (safe operating area) of 320µs and a maximum junction temperature of 175°C, this IGBT is suitable for a wide range of high-power applications requiring high efficiency and reliability.The IXGH32N60CD1 has a low saturation voltage of 1.9V at 32A, ensuring minimal power losses during operation. It also has a low switching energy of 720µJ, making it ideal for high-frequency switching applications. The IGBT is housed in a TO-247 package, which provides excellent thermal performance and reliability under high temperature conditions.Other key features of the IXGH32N60CD1 include a built-in soft fast-recovery anti-parallel diode, which helps to reduce switching losses and improve efficiency. It also has low on-state voltage drop and high short-circuit capability, making it suitable for motor drives, power supplies, and other industrial applications.

Caratteristiche principali

High voltage IGBT with anti-parallel diode
600V VCES rating for low frequency applications
32A collector current for high power handling capability
Low VCE(sat) for reduced power losses
On-state current rating of 64A for robust performance
Industry standard TO-247 package for easy mounting

Applicazione

Motor drives
AC and DC servo drives
Induction heating
Welding equipment
Switch mode power supplies
Uninterruptible power supplies
High frequency inverters
Motor controllers
Industrial inverters
Electric vehicles

Specifiche

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Maximum Gate Emitter Voltage	- 20 V, + 20 V
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Series	IXGH32N60	Continuous Collector Current Ic Max	60 A
Height	21.46 mm	Length	16.26 mm
Product Type	IGBT Transistors	Factory Pack Quantity	30
Subcategory	IGBTs	Width	5.3 mm
Unit Weight	0.229281 oz

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